Presentation | 1995/10/17 Semiconductor lasers with SiO_2 current blocking layers fabricated by direct wafer bonding Hiroshi Wada, Yoh Ogawa, Takeshi Kamijoh, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have fabricated 1.3μm InGaAsP/InP lasers with SiO_2 current blocking layers. The lasers have been successfully fabricated by direct bonding of InP on SiO_2. Threshold current density of 1.9 kA/cm^2 has been achieved with 300μm-long cavity and no facet coatings. This implies that there is no leakage current in this laser structure. The parasitic capacitance of the lasers with the area of 300×300μm^2 have been measured to be 31pF. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | direct wafer bonding / semiconductor laser / current blocking / leakage current |
Paper # | LQE95-86 |
Date of Issue |
Conference Information | |
Committee | LQE |
---|---|
Conference Date | 1995/10/17(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Semiconductor lasers with SiO_2 current blocking layers fabricated by direct wafer bonding |
Sub Title (in English) | |
Keyword(1) | direct wafer bonding |
Keyword(2) | semiconductor laser |
Keyword(3) | current blocking |
Keyword(4) | leakage current |
1st Author's Name | Hiroshi Wada |
1st Author's Affiliation | Semiconductor Technology Laboratory, R & D Group OKI Electric Industry Co., Ltd.() |
2nd Author's Name | Yoh Ogawa |
2nd Author's Affiliation | Semiconductor Technology Laboratory, R & D Group OKI Electric Industry Co., Ltd. |
3rd Author's Name | Takeshi Kamijoh |
3rd Author's Affiliation | Semiconductor Technology Laboratory, R & D Group OKI Electric Industry Co., Ltd. |
Date | 1995/10/17 |
Paper # | LQE95-86 |
Volume (vol) | vol.95 |
Number (no) | 294 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |