| Presentation | 1995/10/17 Semiconductor lasers with SiO_2 current blocking layers fabricated by direct wafer bonding Hiroshi Wada, Yoh Ogawa, Takeshi Kamijoh, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated 1.3μm InGaAsP/InP lasers with SiO_2 current blocking layers. The lasers have been successfully fabricated by direct bonding of InP on SiO_2. Threshold current density of 1.9 kA/cm^2 has been achieved with 300μm-long cavity and no facet coatings. This implies that there is no leakage current in this laser structure. The parasitic capacitance of the lasers with the area of 300×300μm^2 have been measured to be 31pF. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | direct wafer bonding / semiconductor laser / current blocking / leakage current |
| Paper # | LQE95-86 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 1995/10/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Semiconductor lasers with SiO_2 current blocking layers fabricated by direct wafer bonding |
| Sub Title (in English) | |
| Keyword(1) | direct wafer bonding |
| Keyword(2) | semiconductor laser |
| Keyword(3) | current blocking |
| Keyword(4) | leakage current |
| 1st Author's Name | Hiroshi Wada |
| 1st Author's Affiliation | Semiconductor Technology Laboratory, R & D Group OKI Electric Industry Co., Ltd.() |
| 2nd Author's Name | Yoh Ogawa |
| 2nd Author's Affiliation | Semiconductor Technology Laboratory, R & D Group OKI Electric Industry Co., Ltd. |
| 3rd Author's Name | Takeshi Kamijoh |
| 3rd Author's Affiliation | Semiconductor Technology Laboratory, R & D Group OKI Electric Industry Co., Ltd. |
| Date | 1995/10/17 |
| Paper # | LQE95-86 |
| Volume (vol) | vol.95 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |