Presentation 1995/10/17
Semiconductor lasers with SiO_2 current blocking layers fabricated by direct wafer bonding
Hiroshi Wada, Yoh Ogawa, Takeshi Kamijoh,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have fabricated 1.3μm InGaAsP/InP lasers with SiO_2 current blocking layers. The lasers have been successfully fabricated by direct bonding of InP on SiO_2. Threshold current density of 1.9 kA/cm^2 has been achieved with 300μm-long cavity and no facet coatings. This implies that there is no leakage current in this laser structure. The parasitic capacitance of the lasers with the area of 300×300μm^2 have been measured to be 31pF.
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Keyword(in English) direct wafer bonding / semiconductor laser / current blocking / leakage current
Paper # LQE95-86
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Conference Information
Committee LQE
Conference Date 1995/10/17(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Semiconductor lasers with SiO_2 current blocking layers fabricated by direct wafer bonding
Sub Title (in English)
Keyword(1) direct wafer bonding
Keyword(2) semiconductor laser
Keyword(3) current blocking
Keyword(4) leakage current
1st Author's Name Hiroshi Wada
1st Author's Affiliation Semiconductor Technology Laboratory, R & D Group OKI Electric Industry Co., Ltd.()
2nd Author's Name Yoh Ogawa
2nd Author's Affiliation Semiconductor Technology Laboratory, R & D Group OKI Electric Industry Co., Ltd.
3rd Author's Name Takeshi Kamijoh
3rd Author's Affiliation Semiconductor Technology Laboratory, R & D Group OKI Electric Industry Co., Ltd.
Date 1995/10/17
Paper # LQE95-86
Volume (vol) vol.95
Number (no) 294
Page pp.pp.-
#Pages 6
Date of Issue