| Presentation | 1995/10/17 A low threshold operation of micro-cavity InGaAs/GaAs vertical-cavity surface-emitting lasers T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, K. Iga, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A low threshold InGaAs/GaAs vertical-cavity surface-emitting laser (VCSEL) array may be one of candidates for future optoelectronics including parallel optical interconnects and optical light communications. In this letter, we have shown some lasing characteristics of VCSELs with mesa-etched structure and oxide confinement structure. We have achieved 0.33 mA threshold in mesa-etched VCSEL and 70 μA in oxide confinement one. To reduce the resistance of p-type GaAs/AlAs distributed Bragg reflectors of VCSELs, we theoretically point out that the heavily doping into the wide band-gap layer is very effective. We have experimentally demonstrated a high Zn doping in AlAs by metal organic chemical vapor deposition. A re-activation of Zn acceptors is realized by N_2 annealing and the maximum hole concentration of 7×10^18cm^<-3> for AlAs is obtained. These low power consumption performances are essential for future 2-D optical systems with density packed VCSELs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | vertical-cavity surface-emitting laser / low threshold / low power consumption / Native Oxide |
| Paper # | LQE95-85 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1995/10/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A low threshold operation of micro-cavity InGaAs/GaAs vertical-cavity surface-emitting lasers |
| Sub Title (in English) | |
| Keyword(1) | vertical-cavity surface-emitting laser |
| Keyword(2) | low threshold |
| Keyword(3) | low power consumption |
| Keyword(4) | Native Oxide |
| 1st Author's Name | T. Mukaihara |
| 1st Author's Affiliation | Tokyo Institute of Technology, Precision & Intelligence Laboratory() |
| 2nd Author's Name | N. Hatori |
| 2nd Author's Affiliation | Tokyo Institute of Technology, Precision & Intelligence Laboratory |
| 3rd Author's Name | N. Ohnoki |
| 3rd Author's Affiliation | Tokyo Institute of Technology, Precision & Intelligence Laboratory |
| 4th Author's Name | A. Matsutani |
| 4th Author's Affiliation | Tokyo Institute of Technology, Precision & Intelligence Laboratory |
| 5th Author's Name | F. Koyama |
| 5th Author's Affiliation | Tokyo Institute of Technology, Precision & Intelligence Laboratory |
| 6th Author's Name | K. Iga |
| 6th Author's Affiliation | Tokyo Institute of Technology, Precision & Intelligence Laboratory |
| Date | 1995/10/17 |
| Paper # | LQE95-85 |
| Volume (vol) | vol.95 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |