Presentation | 1995/10/17 Fabrication of 0.98μm InGaAs/InGaP DFB LD Grown by Gas-source Molecular-beam-epitaxy Masashi Usami, Yoshiyuki Takahira, Yuichi Mastushima, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Long term stability for pumping wavelength is an important issue on the performance of low noise EDFAs, especially for 0.98 μm pumping range. Extremely high characteristic temperature T0 of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement by the MQB effect of the GaAs/InGaP superlattice optical confinement layer (SL-OCL). 0.98 μm InGaAs/InGaP DFB LD was successfully fabricated by a gas-source molecular-beam-epitaxy (GS-MBE) for the first time using a novel arsenic-free thermal pre-cleaning method. Threshold current of 30 mA and single wavelength operation up to 16 mW were obtained. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Gas-source MBE / 0.98μm-LD / DFB-LD / EDFA |
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Conference Information | |
Committee | LQE |
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Conference Date | 1995/10/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of 0.98μm InGaAs/InGaP DFB LD Grown by Gas-source Molecular-beam-epitaxy |
Sub Title (in English) | |
Keyword(1) | Gas-source MBE |
Keyword(2) | 0.98μm-LD |
Keyword(3) | DFB-LD |
Keyword(4) | EDFA |
1st Author's Name | Masashi Usami |
1st Author's Affiliation | KDD R & D Laboratories() |
2nd Author's Name | Yoshiyuki Takahira |
2nd Author's Affiliation | KDD R & D Laboratories |
3rd Author's Name | Yuichi Mastushima |
3rd Author's Affiliation | KDD R & D Laboratories |
Date | 1995/10/17 |
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Volume (vol) | vol.95 |
Number (no) | 294 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |