Presentation 1995/10/17
Fabrication of 0.98μm InGaAs/InGaP DFB LD Grown by Gas-source Molecular-beam-epitaxy
Masashi Usami, Yoshiyuki Takahira, Yuichi Mastushima,
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Abstract(in English) Long term stability for pumping wavelength is an important issue on the performance of low noise EDFAs, especially for 0.98 μm pumping range. Extremely high characteristic temperature T0 of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement by the MQB effect of the GaAs/InGaP superlattice optical confinement layer (SL-OCL). 0.98 μm InGaAs/InGaP DFB LD was successfully fabricated by a gas-source molecular-beam-epitaxy (GS-MBE) for the first time using a novel arsenic-free thermal pre-cleaning method. Threshold current of 30 mA and single wavelength operation up to 16 mW were obtained.
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Keyword(in English) Gas-source MBE / 0.98μm-LD / DFB-LD / EDFA
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Conference Information
Committee LQE
Conference Date 1995/10/17(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of 0.98μm InGaAs/InGaP DFB LD Grown by Gas-source Molecular-beam-epitaxy
Sub Title (in English)
Keyword(1) Gas-source MBE
Keyword(2) 0.98μm-LD
Keyword(3) DFB-LD
Keyword(4) EDFA
1st Author's Name Masashi Usami
1st Author's Affiliation KDD R & D Laboratories()
2nd Author's Name Yoshiyuki Takahira
2nd Author's Affiliation KDD R & D Laboratories
3rd Author's Name Yuichi Mastushima
3rd Author's Affiliation KDD R & D Laboratories
Date 1995/10/17
Paper #
Volume (vol) vol.95
Number (no) 294
Page pp.pp.-
#Pages 6
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