| Presentation | 1995/12/8 Surface-Emitting Laser on Si Substrate grown by MOCVD Naoki NAKANISHI, Yoshihiko MURATA, Hitoshi INABA, Yoshiaki HASEGAWA, Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated an AlGaAs/GaAs surface-emitting laser on Si substrate grown by MOCVD. We have also confirmed that this laser was successfully operated under cw condition up to 150K. In this study we report the lifetime of the under pulsed operation at room-temperature and continuous wave (cw) operation at 100K. Usually the GaAs-based lasers on Si substrates suffer from rapid degradation due to dislocation density and high residual stress. Using cathodeluminescence measurement, we confirmed the reduction of dislocation density and residual stress by use of post-growth patterning and annealing (at 850℃ for 1 hour under AsH3) This technique is very promising for the realization of room-temperature cw operation of surface-emitting laser on Si. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / GaAs on Si / surface-emitting laser / multi quantum wells / cw operation |
| Paper # | LQE95-112 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1995/12/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface-Emitting Laser on Si Substrate grown by MOCVD |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | GaAs on Si |
| Keyword(3) | surface-emitting laser |
| Keyword(4) | multi quantum wells |
| Keyword(5) | cw operation |
| 1st Author's Name | Naoki NAKANISHI |
| 1st Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology() |
| 2nd Author's Name | Yoshihiko MURATA |
| 2nd Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
| 3rd Author's Name | Hitoshi INABA |
| 3rd Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
| 4th Author's Name | Yoshiaki HASEGAWA |
| 4th Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
| 5th Author's Name | Takashi EGAWA |
| 5th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 6th Author's Name | Takashi JIMBO |
| 6th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 7th Author's Name | Masayoshi UMENO |
| 7th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| Date | 1995/12/8 |
| Paper # | LQE95-112 |
| Volume (vol) | vol.95 |
| Number (no) | 403 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |