| Presentation | 1995/12/8 1.3μm GaInAsP/InP Surface-Emitting Lasers S. Uchiyama, N. Yokouchi, T. Ninomiya, |
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| PDF Download Page | PDF download Page Link | ||
| Abstract(in Japanese) | (See Japanese page) | ||
| Abstract(in English) | We have introduced a square mesa with sides at an angle of 45゜to the <011> orientation into buried heterostructure (BH) of 1.3μm GaInAsP/InP surface-emitting (SE) laser regrown by MOCVD and a Si/Al_2O_3 stacked mirror into its p-side mirror. We have made 1.3μm GaInAs/InP SE lasers with a bulk active layer and low threshold pulsed oscillation (I_ | =12 mA) at room temperature and CW oscillation up to 13℃ were realized. Next, we have demonstrated 1.3μmm GaInAs/InP SE lasers with a high gain active layer such as a multi-quantum well (MQW) or a strained MQW and low threshold pulsed oscillation (I_ | =15 mA) at room temperature and CW oscillation up to 7℃ were obtained. |
| Keyword(in Japanese) | (See Japanese page) | ||
| Keyword(in English) | surface-emitting laser / buried heterostructure / p-side mirror / high gain active layer | ||
| Paper # | LQE95-111 | ||
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1995/12/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 1.3μm GaInAsP/InP Surface-Emitting Lasers |
| Sub Title (in English) | |
| Keyword(1) | surface-emitting laser |
| Keyword(2) | buried heterostructure |
| Keyword(3) | p-side mirror |
| Keyword(4) | high gain active layer |
| 1st Author's Name | S. Uchiyama |
| 1st Author's Affiliation | Optoelectronics Furukawa Laboratory, Real World Computing Partnership Co Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.() |
| 2nd Author's Name | N. Yokouchi |
| 2nd Author's Affiliation | Optoelectronics Furukawa Laboratory, Real World Computing Partnership Co Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
| 3rd Author's Name | T. Ninomiya |
| 3rd Author's Affiliation | Optoelectronics Furukawa Laboratory, Real World Computing Partnership Co Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
| Date | 1995/12/8 |
| Paper # | LQE95-111 |
| Volume (vol) | vol.95 |
| Number (no) | 403 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |