Presentation 1995/6/22
Ridge waveguide semiconductor optical amplifier
H. Takano, T. Kanetake, M. Suzuki, M. Aoki, H. Inoue,
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Abstract(in English) Semiconductor optical amplifier has advantages of small size and low cost. In practice it seems to be important to make the devices which have the same characteristics with each other. We propose ridge waveguide with reverse mesa side-walls because this type needs very simple process to make it. We used TiO_2/SiO_2 double layer anti-reflection coat by Electron-Beam sputtering method which has wide tolerance of making error. We can easily attain <0.2% reflectivity and suppress lasing. The amplifier shows the same characteristics as buried usual one with complicated process : single path gain is 19dB and saturation output power is +5dBm at 200mA.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Semiconductor optical amplifier / ridge waveguide / reverse mesa / EB sputtering method / AR coat
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Committee LQE
Conference Date 1995/6/22(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Ridge waveguide semiconductor optical amplifier
Sub Title (in English)
Keyword(1) Semiconductor optical amplifier
Keyword(2) ridge waveguide
Keyword(3) reverse mesa
Keyword(4) EB sputtering method
Keyword(5) AR coat
1st Author's Name H. Takano
1st Author's Affiliation Central Research Lab. HITACHI. Ltd.()
2nd Author's Name T. Kanetake
2nd Author's Affiliation Central Research Lab. HITACHI. Ltd.
3rd Author's Name M. Suzuki
3rd Author's Affiliation Central Research Lab. HITACHI. Ltd.
4th Author's Name M. Aoki
4th Author's Affiliation Central Research Lab. HITACHI. Ltd.
5th Author's Name H. Inoue
5th Author's Affiliation Central Research Lab. HITACHI. Ltd.
Date 1995/6/22
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Volume (vol) vol.95
Number (no) 113
Page pp.pp.-
#Pages 6
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