Presentation 1995/6/22
MQW modulator integrated DFB lasers for 10Gb/s transmission
K. Morito, K. Sato, Y. Kotaki, R. Sahara, H. Soda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Operating modulator integrated DFB lasers under high power is difficult because high optical power densities and large photocurrent densities in the modulator cause hole pile up induced modulation characteristics degradation. For suppressing the hole pile up, a modulator integrated DFB laser incorporating a strain-compensated MQW and graded SCH modulator was developed. The device shows stable modulation characteristics and 10Gb/s transmission of standard single mode fiber under high power operation. And improved transmission characteristics are demonstrated in the negative α parameter regime which can be tuned by increasing the pre bias.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) modulator integrated DFB laser / hole pile up / strain-compensated MQW / graded SCH
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Conference Information
Committee LQE
Conference Date 1995/6/22(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) MQW modulator integrated DFB lasers for 10Gb/s transmission
Sub Title (in English)
Keyword(1) modulator integrated DFB laser
Keyword(2) hole pile up
Keyword(3) strain-compensated MQW
Keyword(4) graded SCH
1st Author's Name K. Morito
1st Author's Affiliation Fujitsu Laboratories Ltd.()
2nd Author's Name K. Sato
2nd Author's Affiliation Fujitsu Laboratories Ltd.
3rd Author's Name Y. Kotaki
3rd Author's Affiliation Fujitsu Laboratories Ltd.
4th Author's Name R. Sahara
4th Author's Affiliation Fujitsu Laboratories Ltd.:National Science Foundation
5th Author's Name H. Soda
5th Author's Affiliation Fujitsu Laboratories Ltd.:Fujitsu Limited
Date 1995/6/22
Paper #
Volume (vol) vol.95
Number (no) 113
Page pp.pp.-
#Pages 6
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