Presentation 1995/5/26
Blue-Green II-VI Laser Fabricated by Oxygen Ion-Implantation
S. Yoshii, T. Yokogawa, K. Ohkawa, A. Tsujimura, Y. Sasai,
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Abstract(in English) Blue-green II-VI laser with current confinement by oxygen ion-implantation has been achieved for the first time. The laser structures consisted of ZnCdSe/ZnSSe/ZnMgSSe (SQW-SCH). Oxygen ions were implanted with a dose of 1×10^<13>cm^<-2> at an energy of 90kV to produce a high-resistivity regions with a depth of approximately 0.14μm in contact layer. The oscillation wavelength was 517nm and the threshold current was 80mA at room temperature.
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Keyword(in English) Blue-green laser / II-VI compounds / oxygen ion-implantation / current confinement
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Committee LQE
Conference Date 1995/5/26(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Blue-Green II-VI Laser Fabricated by Oxygen Ion-Implantation
Sub Title (in English)
Keyword(1) Blue-green laser
Keyword(2) II-VI compounds
Keyword(3) oxygen ion-implantation
Keyword(4) current confinement
1st Author's Name S. Yoshii
1st Author's Affiliation Matsushita Electric Ind. Co., Ltd., Semiconductor Research Center()
2nd Author's Name T. Yokogawa
2nd Author's Affiliation Matsushita Electric Ind. Co., Ltd., Semiconductor Research Center
3rd Author's Name K. Ohkawa
3rd Author's Affiliation Matsushita Electric Ind. Co., Ltd., Semiconductor Research Center
4th Author's Name A. Tsujimura
4th Author's Affiliation Matsushita Electric Ind. Co., Ltd., Semiconductor Research Center
5th Author's Name Y. Sasai
5th Author's Affiliation Matsushita Electric Ind. Co., Ltd., Semiconductor Research Center
Date 1995/5/26
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Volume (vol) vol.95
Number (no) 80
Page pp.pp.-
#Pages 6
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