Presentation | 1995/5/26 Low-noise, high-power laser diode with a saturable absorbing layer N. Hayashi, T. Goto, D. Ide, A. Ibaraki, K. Yodoshi, T. Niina, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Low-noise, high-power GaAlAs lasers without a high-frequency superimposed modulator are strongly desired as light sources for recordable optical disk systems. Low-noise, high-power GaAlAs lasers were achieved for the first time, due to a new structure with a saturable absorbing layer and a GaAlAs current blocking layer. An output power of 180mW and self-sustained pulsation up to 20mW were obtained. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | semiconductor laser / self-sustained pulsation / saturable absorbing layer / multi quantum well / GaAlAs |
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Conference Information | |
Committee | LQE |
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Conference Date | 1995/5/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Low-noise, high-power laser diode with a saturable absorbing layer |
Sub Title (in English) | |
Keyword(1) | semiconductor laser |
Keyword(2) | self-sustained pulsation |
Keyword(3) | saturable absorbing layer |
Keyword(4) | multi quantum well |
Keyword(5) | GaAlAs |
1st Author's Name | N. Hayashi |
1st Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd.() |
2nd Author's Name | T. Goto |
2nd Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
3rd Author's Name | D. Ide |
3rd Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
4th Author's Name | A. Ibaraki |
4th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
5th Author's Name | K. Yodoshi |
5th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
6th Author's Name | T. Niina |
6th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
Date | 1995/5/26 |
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Volume (vol) | vol.95 |
Number (no) | 80 |
Page | pp.pp.- |
#Pages | 6 |
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