Presentation 1995/5/26
Low-noise, high-power laser diode with a saturable absorbing layer
N. Hayashi, T. Goto, D. Ide, A. Ibaraki, K. Yodoshi, T. Niina,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Low-noise, high-power GaAlAs lasers without a high-frequency superimposed modulator are strongly desired as light sources for recordable optical disk systems. Low-noise, high-power GaAlAs lasers were achieved for the first time, due to a new structure with a saturable absorbing layer and a GaAlAs current blocking layer. An output power of 180mW and self-sustained pulsation up to 20mW were obtained.
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Keyword(in English) semiconductor laser / self-sustained pulsation / saturable absorbing layer / multi quantum well / GaAlAs
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Committee LQE
Conference Date 1995/5/26(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low-noise, high-power laser diode with a saturable absorbing layer
Sub Title (in English)
Keyword(1) semiconductor laser
Keyword(2) self-sustained pulsation
Keyword(3) saturable absorbing layer
Keyword(4) multi quantum well
Keyword(5) GaAlAs
1st Author's Name N. Hayashi
1st Author's Affiliation Microelectronics Research Center, SANYO Electric Co., Ltd.()
2nd Author's Name T. Goto
2nd Author's Affiliation Microelectronics Research Center, SANYO Electric Co., Ltd.
3rd Author's Name D. Ide
3rd Author's Affiliation Microelectronics Research Center, SANYO Electric Co., Ltd.
4th Author's Name A. Ibaraki
4th Author's Affiliation Microelectronics Research Center, SANYO Electric Co., Ltd.
5th Author's Name K. Yodoshi
5th Author's Affiliation Microelectronics Research Center, SANYO Electric Co., Ltd.
6th Author's Name T. Niina
6th Author's Affiliation Microelectronics Research Center, SANYO Electric Co., Ltd.
Date 1995/5/26
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Volume (vol) vol.95
Number (no) 80
Page pp.pp.-
#Pages 6
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