| Presentation | 1996/12/10 Quantum confined stark effect of ZnCdSe/MgZnCdSe MQW on InP substrate, and application to Fabry-Parot optical modulators Masaru HARAGUCHI, Masayuki ARAI, Toshihiro MORITA, Hiroshi HATTORI, Takeshi NAGANO, Ichirou NOMURA, Akihiko KIKUCHI, Kazuhiko SHIMOMURA, Katsumi KISHINO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The purpose of this study is the realization of optical modulator of II-VI MgZnCdSe compounds lattice-matching to InP substrate. In this study, quantum confined stark effect of ZnCdSe/MgZnCdSe multiple quantum well(MQW) grown on InP substrate by molecular beam epitaxy(MBE) was investigated. The reflectance measurement for the MQW structure at room temperature showed the maximum variation of the reflectance at a wavelength near the lowest excitonic transition gap was -6.3% which corresponded to the refractive index venation of -3.4% under 1.87x10^5V/cm electric field apply. This value was larger than that of III-V materials. It is expected that the high performance optical modulator is realized due to the large excitonic effect on II-VI compounds. Fabry-Parot optical modulator which consisted of the spacer layer of the MQW between two multiple layer reflectors were also designed, and the extinction ratio and the insertion loss of the modulator were estimated. Furthermore MgZnCdSe multiple layer reflectors were grown an maximum reflectance of 98.0% was obtained at 596nm |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MgZnCdSe compound / quantum confined stark effect / refractive index variation / extinction ratio / insertion loss / multiple layer reflector |
| Paper # | LQE96-121 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1996/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Quantum confined stark effect of ZnCdSe/MgZnCdSe MQW on InP substrate, and application to Fabry-Parot optical modulators |
| Sub Title (in English) | |
| Keyword(1) | MgZnCdSe compound |
| Keyword(2) | quantum confined stark effect |
| Keyword(3) | refractive index variation |
| Keyword(4) | extinction ratio |
| Keyword(5) | insertion loss |
| Keyword(6) | multiple layer reflector |
| 1st Author's Name | Masaru HARAGUCHI |
| 1st Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University() |
| 2nd Author's Name | Masayuki ARAI |
| 2nd Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 3rd Author's Name | Toshihiro MORITA |
| 3rd Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 4th Author's Name | Hiroshi HATTORI |
| 4th Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 5th Author's Name | Takeshi NAGANO |
| 5th Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 6th Author's Name | Ichirou NOMURA |
| 6th Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 7th Author's Name | Akihiko KIKUCHI |
| 7th Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 8th Author's Name | Kazuhiko SHIMOMURA |
| 8th Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| 9th Author's Name | Katsumi KISHINO |
| 9th Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University |
| Date | 1996/12/10 |
| Paper # | LQE96-121 |
| Volume (vol) | vol.96 |
| Number (no) | 399 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |