Presentation 1996/12/10
Influence of X states on photoluminescence in type-I CaAs/AlAs semiconductor superlattices
Naoki Ohtanil, Makoto Hosoda, Hidenori Mimura,
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Abstract(in English) We report the influence of X states on the optical properties of type-I GaAs/AlAs semiconductor superlattices. We observed Stark ladder photoluminescence (PL) in some X states originating from X1-Γ2 mixing. The PL line exhibits a linear blue shift corresponding to one half the period of the super-lattice with increasing bias voltage. The PL intensity then becomes maximum when the X1-Γ2 mixing occurs. Carrier sweep-out from the X states is drastically improved by the X1-Γ2 mixing. These results demonstrate that optical properties even in type-I superlattices are seriously affected by the mixing of X states with a higher Γ subband under an electric field.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAs/AlAs type-I superlattices / X states / Γ-X mixing / X1-Γ2 mixing / Stark ladder photoluminescence
Paper # LQE96-119
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Committee LQE
Conference Date 1996/12/10(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Influence of X states on photoluminescence in type-I CaAs/AlAs semiconductor superlattices
Sub Title (in English)
Keyword(1) GaAs/AlAs type-I superlattices
Keyword(2) X states
Keyword(3) Γ-X mixing
Keyword(4) X1-Γ2 mixing
Keyword(5) Stark ladder photoluminescence
1st Author's Name Naoki Ohtanil
1st Author's Affiliation ATR Adaptive Communications Research Laboratories()
2nd Author's Name Makoto Hosoda
2nd Author's Affiliation ATR Optical and Radio Communications Research Laboratories
3rd Author's Name Hidenori Mimura
3rd Author's Affiliation Research Institute of Electrical Communication, Tohoku University
Date 1996/12/10
Paper # LQE96-119
Volume (vol) vol.96
Number (no) 399
Page pp.pp.-
#Pages 6
Date of Issue