| Presentation | 1996/12/10 Optical characterization of GaAs lateral p-n junctions using a near-field optical microscope N. SAITO, F. SATO, K. TAKIZAWA, T. SAIKI, M. OHTSU, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Simultaneous fabrication of p- and n-type regions on GaAs pattered substrates is expected to give high-quality p-n junctions. However, their microscopic quality remained unclear due to the unsatisfactory spatial resolution of conventional characterization methods. A near-field optical microscope is utilized for the first time for the optical characterization of lateral p-n junctions. Its high spatial resolution in the measurements of optical properties and surface morphology revealed: 1) The width of the transition region between the p-type and then n-type regions, determined from photoluminescence measurement, was 1.8μm for the junction formed at the upper end of the slope, while 5.5μm for the one at the lower end. 2) On the other hand, the width of the junctions determined from the distribution of light emulsion through current injection, was 1.1μm for both junctions. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Surface light emitting device / p-n junction / GaAs / MBE / Near-field optical microscope |
| Paper # | LQE96-118 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1996/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optical characterization of GaAs lateral p-n junctions using a near-field optical microscope |
| Sub Title (in English) | |
| Keyword(1) | Surface light emitting device |
| Keyword(2) | p-n junction |
| Keyword(3) | GaAs |
| Keyword(4) | MBE |
| Keyword(5) | Near-field optical microscope |
| 1st Author's Name | N. SAITO |
| 1st Author's Affiliation | NHK Science and Technical Research Laboratories() |
| 2nd Author's Name | F. SATO |
| 2nd Author's Affiliation | NHK Science and Technical Research Laboratories |
| 3rd Author's Name | K. TAKIZAWA |
| 3rd Author's Affiliation | NHK Science and Technical Research Laboratories |
| 4th Author's Name | T. SAIKI |
| 4th Author's Affiliation | Kanagawa Academy of Science and Technology |
| 5th Author's Name | M. OHTSU |
| 5th Author's Affiliation | Tokyo Institute of Technology |
| Date | 1996/12/10 |
| Paper # | LQE96-118 |
| Volume (vol) | vol.96 |
| Number (no) | 399 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |