| Presentation | 1996/12/10 Fabrication of Surface-Emitting Laser with InxGa1-_xAs active layer on Si Substrate Naoki NAKANISHI, Yasuyuki YAMADA, Yoshihik MURATA, Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaAs-based lasers on Si substrates suffer from rapid degradations due to high dislocation density and high residual tensile stress which are serious problems for fabrication of reliable lasers. In this study we have fabricated an AlGaAs/InGaAs surface-emitting laser with ten In_<0.02>Ga_<0.98>As quantum wells active layer for reduction of tensile stress. we have achieved the cw operation for this laser at 160K. In addition, aging test under constant current and EL topography showed the improvement of reliability of this laser in comparison to a conventional AlGaAs/GaAs surface-emitting laser on Si substrate. Our experimental results indicate that room-temperature cw operation could be achieved by optimum of In content in the AlGaAs/InGaAs laser on Si substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs on Si / InGaAs / surface-emitting laser / multi quantum wells / cw operation |
| Paper # | LQE96-116 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1996/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of Surface-Emitting Laser with InxGa1-_xAs active layer on Si Substrate |
| Sub Title (in English) | |
| Keyword(1) | GaAs on Si |
| Keyword(2) | InGaAs |
| Keyword(3) | surface-emitting laser |
| Keyword(4) | multi quantum wells |
| Keyword(5) | cw operation |
| 1st Author's Name | Naoki NAKANISHI |
| 1st Author's Affiliation | Nagoya Institute of Technology() |
| 2nd Author's Name | Yasuyuki YAMADA |
| 2nd Author's Affiliation | Nagoya Institute of Technology |
| 3rd Author's Name | Yoshihik MURATA |
| 3rd Author's Affiliation | Nagoya Institute of Technology |
| 4th Author's Name | Takashi EGAWA |
| 4th Author's Affiliation | Nagoya Institute of Technology |
| 5th Author's Name | Takashi JIMBO |
| 5th Author's Affiliation | Nagoya Institute of Technology |
| 6th Author's Name | Masayoshi UMENO |
| 6th Author's Affiliation | Nagoya Institute of Technology |
| Date | 1996/12/10 |
| Paper # | LQE96-116 |
| Volume (vol) | vol.96 |
| Number (no) | 399 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |