| Presentation | 1996/12/10 Polarization characteristics of InGaAs/GaAs strained QW VCSELs grown on GaAs(311)A substrates M. Takahashi, N. Egami, F. Koyama, K. Iga, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An experimental investigation of lazing characteristics in InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) grown on GaAs(311)A substrates is presented. It was found that anisotropic in-plane gain distribution in (311)A-oriented quantum wells (QWs) effectively controls polarization of VCSELs. A stable polarization mode was always exhibited along the [332^^-] direction, which corresponds to the crystallographic axis of maximum gain for (311)-oriented QWs. The [332^^-] polarization mode was maintained against injection currents of 2.5 times the threshold over the wide temperature range of 25℃ to 150℃. The orthogonal [11^^-0] polarization mode was completely suppressed, and an extinction ratio of 16 dB between two orthogonal polarization modes was obtained at 1.5 times the threshold current at 25℃. In addition, a threshold current of 700 μA and a corresponding threshold current density of 110 A/cm^2 were achieved for a 25-μm square aperture device. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Vertical Cavity Surface Emitting Laser / Polarization Control / (311)A-oriented substrate / InGaAs/GaAs strained-quantum well structure / Optical anisotropy |
| Paper # | LQE96-115 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1996/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Polarization characteristics of InGaAs/GaAs strained QW VCSELs grown on GaAs(311)A substrates |
| Sub Title (in English) | |
| Keyword(1) | Vertical Cavity Surface Emitting Laser |
| Keyword(2) | Polarization Control |
| Keyword(3) | (311)A-oriented substrate |
| Keyword(4) | InGaAs/GaAs strained-quantum well structure |
| Keyword(5) | Optical anisotropy |
| 1st Author's Name | M. Takahashi |
| 1st Author's Affiliation | ATR Adaptive Communications Research Laboratories() |
| 2nd Author's Name | N. Egami |
| 2nd Author's Affiliation | ATR Adaptive Communications Research Laboratories |
| 3rd Author's Name | F. Koyama |
| 3rd Author's Affiliation | Tokyo Institute of Technology, Precision & Intelligence Laboratory |
| 4th Author's Name | K. Iga |
| 4th Author's Affiliation | Tokyo Institute of Technology, Precision & Intelligence Laboratory |
| Date | 1996/12/10 |
| Paper # | LQE96-115 |
| Volume (vol) | vol.96 |
| Number (no) | 399 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |