| Presentation | 1996/10/8 Optical gain and lasing characteristics of self-assembled quantum-dot laser Hideaki Saito, Kenichi Nishi, Sigeo Sugou, Yoshimasa Sugimoto, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Threshold current densities of self-assembled quantum-dot lasers are reduced by decreasing mirror loss. These are 660 A/cm^2 at room temperature and 140 A/cm^2 at 77K, which are reductions of 20% and above 40%, respectively. As the threshold current densities reducing, lasing wavelengths shift to the longer wavelength by 20 nm at room temperature and 29 nm at 77K. Especially at 77K, the difference between the lasing wavelength and the ground state level of quantum dot reduces to 14 nm, resulting in the lasing oscillation from near quantum-dot ground state. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | quantum dot laser / MBE / self-assembled dot / InGaAs / ground state / mirror loss |
| Paper # | LQE96-84 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
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| Conference Date | 1996/10/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optical gain and lasing characteristics of self-assembled quantum-dot laser |
| Sub Title (in English) | |
| Keyword(1) | quantum dot laser |
| Keyword(2) | MBE |
| Keyword(3) | self-assembled dot |
| Keyword(4) | InGaAs |
| Keyword(5) | ground state |
| Keyword(6) | mirror loss |
| 1st Author's Name | Hideaki Saito |
| 1st Author's Affiliation | Opto-Electronics Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Kenichi Nishi |
| 2nd Author's Affiliation | Opto-Electronics Research Laboratories, NEC Corporation |
| 3rd Author's Name | Sigeo Sugou |
| 3rd Author's Affiliation | Opto-Electronics Research Laboratories, NEC Corporation |
| 4th Author's Name | Yoshimasa Sugimoto |
| 4th Author's Affiliation | Opto-Electronics Research Laboratories, NEC Corporation |
| Date | 1996/10/8 |
| Paper # | LQE96-84 |
| Volume (vol) | vol.96 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |