| Presentation | 1996/10/8 Room Temperature CW Oscillation of Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer Hajime Shoji, Yoshiaki Nakata, Kohki Mukai, Yoshihiro Sugiyama, Mitsuru Sugawara, Naoki Yokoyama, Hiroshi Ishikawa, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Quantum dot lasers with multi-stacked dot layer have been fabricated. Threshold current, lasing spectra, and electroluminescence spectra of the quantum dot lasers are investigated in detail, and their dependencies on the number of dot layers, the cavity length, and the facet reflectivity are clarified. It is clearly demonstrated that the lasing wavelength is strongly dependent on the optical gain and the cavity loss. In 600μm- and 900μm-long lasers with three dot layers and with high-reflection coating on the both facets, room temperature CW operation is achieved. In the temperature range of 60-200 K, extremely high characteristic temperature beyond 300 K is obtained for the threshold current. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | semiconductor laser / quantum dot / self-formation / molecular beam epitaxy |
| Paper # | LQE96-83 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 1996/10/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Room Temperature CW Oscillation of Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer |
| Sub Title (in English) | |
| Keyword(1) | semiconductor laser |
| Keyword(2) | quantum dot |
| Keyword(3) | self-formation |
| Keyword(4) | molecular beam epitaxy |
| 1st Author's Name | Hajime Shoji |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Yoshiaki Nakata |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Kohki Mukai |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Yoshihiro Sugiyama |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | Mitsuru Sugawara |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | Naoki Yokoyama |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 7th Author's Name | Hiroshi Ishikawa |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 1996/10/8 |
| Paper # | LQE96-83 |
| Volume (vol) | vol.96 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |