| Presentation | 1996/10/8 1.3μm GaInAsP/InP Strained-Layer Multi-Quantum WellSurface-Emitting Lasers S. Uchiyama, N. Yokouchi, T. Ninomiya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have introduced an ion assisted deposition in order to improve the quality of Al_2O_3 and SiO_2, which were used as part of dielectric multi-layer mirrors of 1.3μm surface-emitting (SE) lasers. The refractive index of Al_2O_3 was improved to 1.63 from 1.56 and the one of SiO_2 increased to 1.47 from 1.45. We have demonstrated 1.3μm GaInAsP/InP SE lasers with a multi-quantum well (MQW) or a strained layer (SL) MQW. The threshold current of 1.3μm MQW SE laser was reduced to 10 mA under room temperature pulsed condition. Low threshold room temperature CW operation of 1.3μm SL-MQW SE laser was obtained with threshold current of 2.4 mA. CW operation up to 36℃ was also achieved. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | surface-emitting laser / dielectric multilayer mirror / MQW / strained-layer MQW |
| Paper # | LQE96-81 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1996/10/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 1.3μm GaInAsP/InP Strained-Layer Multi-Quantum WellSurface-Emitting Lasers |
| Sub Title (in English) | |
| Keyword(1) | surface-emitting laser |
| Keyword(2) | dielectric multilayer mirror |
| Keyword(3) | MQW |
| Keyword(4) | strained-layer MQW |
| 1st Author's Name | S. Uchiyama |
| 1st Author's Affiliation | Optoelectronics Furukawa Laboratory, Real World Computing Partnership c/o Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.() |
| 2nd Author's Name | N. Yokouchi |
| 2nd Author's Affiliation | Optoelectronics Furukawa Laboratory, Real World Computing Partnership c/o Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
| 3rd Author's Name | T. Ninomiya |
| 3rd Author's Affiliation | Optoelectronics Furukawa Laboratory, Real World Computing Partnership c/o Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
| Date | 1996/10/8 |
| Paper # | LQE96-81 |
| Volume (vol) | vol.96 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |