Presentation | 1996/10/8 Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Saturable Absorbing Layer Hideto Adachi, Isao Kidoguchi, Toshiya Fukuhisa, Kiyotake Tanaka, Masaya Mannoh, Akira Takamori, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Self-sustained-pulsing AlGaInP laser diodes having very low intensity noise characteristics were successfully demonstrated by adopting a novel structure, which has highly doped saturable absorbing layer. Short carrier lifetime, which is indispensable for self-sustained pulsation, was realized by applying highly doped saturable absorbing layer. Self-pulsing laser diodes with the lasing wavelength of 659nm were fabricated, resulting in the threshold current of 76mA at 20℃. The relative intensity noise (RIN) was below -138dB/Hz in the temperature range 20-60℃ at the average output power of 5mW. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | laser diode / AlGaInP / self-pulsation / saturable absorption / noise / optical disc |
Paper # | LQE96-78 |
Date of Issue |
Conference Information | |
Committee | LQE |
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Conference Date | 1996/10/8(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Saturable Absorbing Layer |
Sub Title (in English) | |
Keyword(1) | laser diode |
Keyword(2) | AlGaInP |
Keyword(3) | self-pulsation |
Keyword(4) | saturable absorption |
Keyword(5) | noise |
Keyword(6) | optical disc |
1st Author's Name | Hideto Adachi |
1st Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.() |
2nd Author's Name | Isao Kidoguchi |
2nd Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. |
3rd Author's Name | Toshiya Fukuhisa |
3rd Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. |
4th Author's Name | Kiyotake Tanaka |
4th Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. |
5th Author's Name | Masaya Mannoh |
5th Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. |
6th Author's Name | Akira Takamori |
6th Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. |
Date | 1996/10/8 |
Paper # | LQE96-78 |
Volume (vol) | vol.96 |
Number (no) | 290 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |