| Presentation | 1996/10/8 Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Saturable Absorbing Layer Hideto Adachi, Isao Kidoguchi, Toshiya Fukuhisa, Kiyotake Tanaka, Masaya Mannoh, Akira Takamori, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Self-sustained-pulsing AlGaInP laser diodes having very low intensity noise characteristics were successfully demonstrated by adopting a novel structure, which has highly doped saturable absorbing layer. Short carrier lifetime, which is indispensable for self-sustained pulsation, was realized by applying highly doped saturable absorbing layer. Self-pulsing laser diodes with the lasing wavelength of 659nm were fabricated, resulting in the threshold current of 76mA at 20℃. The relative intensity noise (RIN) was below -138dB/Hz in the temperature range 20-60℃ at the average output power of 5mW. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | laser diode / AlGaInP / self-pulsation / saturable absorption / noise / optical disc |
| Paper # | LQE96-78 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
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| Conference Date | 1996/10/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Saturable Absorbing Layer |
| Sub Title (in English) | |
| Keyword(1) | laser diode |
| Keyword(2) | AlGaInP |
| Keyword(3) | self-pulsation |
| Keyword(4) | saturable absorption |
| Keyword(5) | noise |
| Keyword(6) | optical disc |
| 1st Author's Name | Hideto Adachi |
| 1st Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Isao Kidoguchi |
| 2nd Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Toshiya Fukuhisa |
| 3rd Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Kiyotake Tanaka |
| 4th Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. |
| 5th Author's Name | Masaya Mannoh |
| 5th Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. |
| 6th Author's Name | Akira Takamori |
| 6th Author's Affiliation | Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. |
| Date | 1996/10/8 |
| Paper # | LQE96-78 |
| Volume (vol) | vol.96 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |