Presentation | 1998/2/17 GaN micro-facet laser fabricated by selective area MOVPE T. Akasaka, S. Ando, Y. Kobayashi, M. Kumagai, N. Kobayashi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | GaN hexagonal microprisms (HMPs) was successfully fabricated on (0001) sapphire substrate for the first time, by use of selective area metalorganic vapor phase expitaxy. We found that the orientation of GaN facets is controlled by changing surface coverage of active nitrogen. Lasing was observed from the GaN HMPs by photo-pumping operated at room temperature. The mode of lasing had an inscribed hexagonal optical path. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN hexagonal microprism / selective area MOVPE / fact orientation / micro-facet laser |
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Conference Information | |
Committee | LQE |
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Conference Date | 1998/2/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | GaN micro-facet laser fabricated by selective area MOVPE |
Sub Title (in English) | |
Keyword(1) | GaN hexagonal microprism |
Keyword(2) | selective area MOVPE |
Keyword(3) | fact orientation |
Keyword(4) | micro-facet laser |
1st Author's Name | T. Akasaka |
1st Author's Affiliation | NTT Basic Research Laboratories() |
2nd Author's Name | S. Ando |
2nd Author's Affiliation | NTT Basic Research Laboratories |
3rd Author's Name | Y. Kobayashi |
3rd Author's Affiliation | NTT Basic Research Laboratories |
4th Author's Name | M. Kumagai |
4th Author's Affiliation | NTT Basic Research Laboratories |
5th Author's Name | N. Kobayashi |
5th Author's Affiliation | NTT Basic Research Laboratories |
Date | 1998/2/17 |
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Volume (vol) | vol.97 |
Number (no) | 543 |
Page | pp.pp.- |
#Pages | 6 |
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