Presentation 1998/2/17
GaN micro-facet laser fabricated by selective area MOVPE
T. Akasaka, S. Ando, Y. Kobayashi, M. Kumagai, N. Kobayashi,
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Abstract(in English) GaN hexagonal microprisms (HMPs) was successfully fabricated on (0001) sapphire substrate for the first time, by use of selective area metalorganic vapor phase expitaxy. We found that the orientation of GaN facets is controlled by changing surface coverage of active nitrogen. Lasing was observed from the GaN HMPs by photo-pumping operated at room temperature. The mode of lasing had an inscribed hexagonal optical path.
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Keyword(in English) GaN hexagonal microprism / selective area MOVPE / fact orientation / micro-facet laser
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Committee LQE
Conference Date 1998/2/17(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GaN micro-facet laser fabricated by selective area MOVPE
Sub Title (in English)
Keyword(1) GaN hexagonal microprism
Keyword(2) selective area MOVPE
Keyword(3) fact orientation
Keyword(4) micro-facet laser
1st Author's Name T. Akasaka
1st Author's Affiliation NTT Basic Research Laboratories()
2nd Author's Name S. Ando
2nd Author's Affiliation NTT Basic Research Laboratories
3rd Author's Name Y. Kobayashi
3rd Author's Affiliation NTT Basic Research Laboratories
4th Author's Name M. Kumagai
4th Author's Affiliation NTT Basic Research Laboratories
5th Author's Name N. Kobayashi
5th Author's Affiliation NTT Basic Research Laboratories
Date 1998/2/17
Paper #
Volume (vol) vol.97
Number (no) 543
Page pp.pp.-
#Pages 6
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