Presentation | 1998/1/22 Distributed Feedback Laser with Air/Semiconductor Gratings Formed by Mass-Transport Assisted Wafer Fusion Technique Masahiro Imada, Toyotsugu Ishibashi, Susumu Noda, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We report on the characteristics of distributed feedback laser with air/semiconductor gratings embedded by wafer fusion technique. The air/semiconductor gratings with 0.4μm period and 0.2μm depth are formed uniformly in a semiconductor by wafer fusion technique. The mass-transport phenomenon occurs at the fused interface, by which we can obtain good I-V characteristics. We demonstrate a single longitudinal mode oscillation at about 1.28μm under pulsed condition at room temperature. The threshold current density is estimated to be 1.3kA/cm^2 and coupling coefficient is also estimated to be over 100cm^<-1>. The high power surface-emission (over 7mW) is also demonstrated. The results demonstrate the feasibility of applying wafer fusion technique to embed gratings in a semiconductor and many applications are expected. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | wafer fusion / distributed feedback lasers / gratings / mass-transport / surface-emitting lasers / InP |
Paper # | LQE97-138 |
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Conference Information | |
Committee | LQE |
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Conference Date | 1998/1/22(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Distributed Feedback Laser with Air/Semiconductor Gratings Formed by Mass-Transport Assisted Wafer Fusion Technique |
Sub Title (in English) | |
Keyword(1) | wafer fusion |
Keyword(2) | distributed feedback lasers |
Keyword(3) | gratings |
Keyword(4) | mass-transport |
Keyword(5) | surface-emitting lasers |
Keyword(6) | InP |
1st Author's Name | Masahiro Imada |
1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
2nd Author's Name | Toyotsugu Ishibashi |
2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
3rd Author's Name | Susumu Noda |
3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
Date | 1998/1/22 |
Paper # | LQE97-138 |
Volume (vol) | vol.97 |
Number (no) | 497 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |