Presentation 1997/11/5
Development of broadband amplifier using low-distortion InGaAs HFET
Hiroyuki Masato, Kazuhisa Fujimoto, Katsuhiko Kawashima, Mitsuru Nishitsuji, Yorito Ota, Kaoru Inoue,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A super low-distortion InGaAs HFET with 1μm-gatelength and a broadband amplifier MMIC with 0.25 1μm-gatelength InGaAs HFET and STO capacitors have been developed. The broadband amplifier using 1μm-gatelength HFET showed excellent low-distortion properties of OIP_2 of +78dBm and of OIP_3 of +34dBm, and also showed the gain of more than 15dB and noise figure of less than 2.0dB throughout a wide band of 70MHz to 1.2GHz. And the MMIC exhibited broadband characteristics throughout a wide frequency range of 500MHz to 5.3GHz and showed the gain of 19.5dB, noise figure of 3.6dB and power comsumption of 330mW at 2.4GHz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaAs HFET / Low-Distortion / Broadband Amplifier / MMIC / STO
Paper # LQE97-115
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Conference Information
Committee LQE
Conference Date 1997/11/5(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of broadband amplifier using low-distortion InGaAs HFET
Sub Title (in English)
Keyword(1) InGaAs HFET
Keyword(2) Low-Distortion
Keyword(3) Broadband Amplifier
Keyword(4) MMIC
Keyword(5) STO
1st Author's Name Hiroyuki Masato
1st Author's Affiliation Electronics Research Laboratory, Matsushita Electronics Corporation()
2nd Author's Name Kazuhisa Fujimoto
2nd Author's Affiliation Electronics Research Laboratory, Matsushita Electronics Corporation
3rd Author's Name Katsuhiko Kawashima
3rd Author's Affiliation Electronics Research Laboratory, Matsushita Electronics Corporation
4th Author's Name Mitsuru Nishitsuji
4th Author's Affiliation Electronics Research Laboratory, Matsushita Electronics Corporation
5th Author's Name Yorito Ota
5th Author's Affiliation Electronics Research Laboratory, Matsushita Electronics Corporation
6th Author's Name Kaoru Inoue
6th Author's Affiliation Electronics Research Laboratory, Matsushita Electronics Corporation
Date 1997/11/5
Paper # LQE97-115
Volume (vol) vol.97
Number (no) 364
Page pp.pp.-
#Pages 6
Date of Issue