Presentation | 1997/11/4 Electron Device Technologies for High-Speed Lightwave Communication Systems Eiichi Sano, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Perspectives on electron device technologies are very important for future communication-system discussions. This paper clarifies the relationship between electron device figure-of-merit and the performance of high-speed digital and analog IC's used in lightwave communication systems. Using this relationship, we estimate future IC performance and comment on future problems in the very-high-speed region. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Lightwave communication / Analog IC / Digital IC / GaAs / InP / HFET / HBT |
Paper # | LQE97-86 |
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Conference Information | |
Committee | LQE |
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Conference Date | 1997/11/4(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electron Device Technologies for High-Speed Lightwave Communication Systems |
Sub Title (in English) | |
Keyword(1) | Lightwave communication |
Keyword(2) | Analog IC |
Keyword(3) | Digital IC |
Keyword(4) | GaAs |
Keyword(5) | InP |
Keyword(6) | HFET |
Keyword(7) | HBT |
1st Author's Name | Eiichi Sano |
1st Author's Affiliation | NTT Optical Network Systems Laboratories() |
Date | 1997/11/4 |
Paper # | LQE97-86 |
Volume (vol) | vol.97 |
Number (no) | 363 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |