Presentation 1997/11/4
Electron Device Technologies for High-Speed Lightwave Communication Systems
Eiichi Sano,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Perspectives on electron device technologies are very important for future communication-system discussions. This paper clarifies the relationship between electron device figure-of-merit and the performance of high-speed digital and analog IC's used in lightwave communication systems. Using this relationship, we estimate future IC performance and comment on future problems in the very-high-speed region.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Lightwave communication / Analog IC / Digital IC / GaAs / InP / HFET / HBT
Paper # LQE97-86
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Conference Information
Committee LQE
Conference Date 1997/11/4(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electron Device Technologies for High-Speed Lightwave Communication Systems
Sub Title (in English)
Keyword(1) Lightwave communication
Keyword(2) Analog IC
Keyword(3) Digital IC
Keyword(4) GaAs
Keyword(5) InP
Keyword(6) HFET
Keyword(7) HBT
1st Author's Name Eiichi Sano
1st Author's Affiliation NTT Optical Network Systems Laboratories()
Date 1997/11/4
Paper # LQE97-86
Volume (vol) vol.97
Number (no) 363
Page pp.pp.-
#Pages 6
Date of Issue