Presentation 1997/10/14
High-Responsivity and Low-Operation-Voltage Edge-Illuminated Refracting-Facet Photodiodes with an Inwardly Angled Facet
H. Fukano, A. Kozen, K. Kato, O. Nakajima,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We demonstrate a novel edge-illuminated refracting-facet photodiode (RFPD), in which the incident light parallel to the up-side surface is refracted at an inwardly angled facet and absorbed in a thin absorption layer. Although the absorption layer is thin, the absorption length is effectively increased by making the light transit at a certain angle to the absorption layer, resulting in an increase in internal quantum efficiency. The fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.95A/W even at a bias voltage of 0.5V for a flat-ended single mode fiber. The 3-dB band-width of more than 6GHz is obtained.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) photodiode / edge-illuminated / refracting-facet / angled facet / high-responsivity
Paper # LQE97-67-83
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Conference Information
Committee LQE
Conference Date 1997/10/14(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-Responsivity and Low-Operation-Voltage Edge-Illuminated Refracting-Facet Photodiodes with an Inwardly Angled Facet
Sub Title (in English)
Keyword(1) photodiode
Keyword(2) edge-illuminated
Keyword(3) refracting-facet
Keyword(4) angled facet
Keyword(5) high-responsivity
1st Author's Name H. Fukano
1st Author's Affiliation NTT Opto-electronices Laboratories()
2nd Author's Name A. Kozen
2nd Author's Affiliation NTT Electronics
3rd Author's Name K. Kato
3rd Author's Affiliation NTT Opto-electronices Laboratories
4th Author's Name O. Nakajima
4th Author's Affiliation NTT Opto-electronices Laboratories
Date 1997/10/14
Paper # LQE97-67-83
Volume (vol) vol.97
Number (no) 313
Page pp.pp.-
#Pages 6
Date of Issue