| Presentation | 1997/10/14 Planar-structure Superlattice APDs I. Watanabe, T. Nakata, M. Hayashi, M. Tsuji, K. Makita, K. Taguchi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Planar-structure InAlAs/InAlGaAs quaternary well superlattice avalanche photodiodes (SL-APDs) are expected for 10Gb/s compact, high-sensitivity, and high-reliability optical receivers. We report the planar SL-APDs with a Ti-implanted guard-ring, which have an advantage for high-reliability and reproducible high-speed response. The fabricated planar SL-APDs exhibited a gain-bandwidth product of 110GHz, a maximum 3-dB bandwidth of 15GHz, a dark current of 0.36μA (@M=10), and a quantum efficiency of 67% (@1.5mm-wavelength). No degradation of dark current was observed after 2000 hours in preliminary aging test at 200℃. These high-speed and high reliability characteristics are promising the planar SL-APDs for 10-Gb/s practical trunk-line uses. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | superlattice / avalanche photodiode / planar / 10-Gb/s / high-reliability |
| Paper # | LQE97-67-83 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1997/10/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Planar-structure Superlattice APDs |
| Sub Title (in English) | |
| Keyword(1) | superlattice |
| Keyword(2) | avalanche photodiode |
| Keyword(3) | planar |
| Keyword(4) | 10-Gb/s |
| Keyword(5) | high-reliability |
| 1st Author's Name | I. Watanabe |
| 1st Author's Affiliation | Optoelectronics and High Frequency Device Res. Labs., NEC Corp.() |
| 2nd Author's Name | T. Nakata |
| 2nd Author's Affiliation | Optoelectronics and High Frequency Device Res. Labs., NEC Corp. |
| 3rd Author's Name | M. Hayashi |
| 3rd Author's Affiliation | Optoelectronics and High Frequency Device Res. Labs., NEC Corp. |
| 4th Author's Name | M. Tsuji |
| 4th Author's Affiliation | Optoelectronics and High Frequency Device Res. Labs., NEC Corp. |
| 5th Author's Name | K. Makita |
| 5th Author's Affiliation | Optoelectronics and High Frequency Device Res. Labs., NEC Corp. |
| 6th Author's Name | K. Taguchi |
| 6th Author's Affiliation | Optoelectronics and High Frequency Device Res. Labs., NEC Corp. |
| Date | 1997/10/14 |
| Paper # | LQE97-67-83 |
| Volume (vol) | vol.97 |
| Number (no) | 313 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |