Presentation 1997/10/14
Planar-structure Superlattice APDs
I. Watanabe, T. Nakata, M. Hayashi, M. Tsuji, K. Makita, K. Taguchi,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Planar-structure InAlAs/InAlGaAs quaternary well superlattice avalanche photodiodes (SL-APDs) are expected for 10Gb/s compact, high-sensitivity, and high-reliability optical receivers. We report the planar SL-APDs with a Ti-implanted guard-ring, which have an advantage for high-reliability and reproducible high-speed response. The fabricated planar SL-APDs exhibited a gain-bandwidth product of 110GHz, a maximum 3-dB bandwidth of 15GHz, a dark current of 0.36μA (@M=10), and a quantum efficiency of 67% (@1.5mm-wavelength). No degradation of dark current was observed after 2000 hours in preliminary aging test at 200℃. These high-speed and high reliability characteristics are promising the planar SL-APDs for 10-Gb/s practical trunk-line uses.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) superlattice / avalanche photodiode / planar / 10-Gb/s / high-reliability
Paper # LQE97-67-83
Date of Issue

Conference Information
Committee LQE
Conference Date 1997/10/14(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Planar-structure Superlattice APDs
Sub Title (in English)
Keyword(1) superlattice
Keyword(2) avalanche photodiode
Keyword(3) planar
Keyword(4) 10-Gb/s
Keyword(5) high-reliability
1st Author's Name I. Watanabe
1st Author's Affiliation Optoelectronics and High Frequency Device Res. Labs., NEC Corp.()
2nd Author's Name T. Nakata
2nd Author's Affiliation Optoelectronics and High Frequency Device Res. Labs., NEC Corp.
3rd Author's Name M. Hayashi
3rd Author's Affiliation Optoelectronics and High Frequency Device Res. Labs., NEC Corp.
4th Author's Name M. Tsuji
4th Author's Affiliation Optoelectronics and High Frequency Device Res. Labs., NEC Corp.
5th Author's Name K. Makita
5th Author's Affiliation Optoelectronics and High Frequency Device Res. Labs., NEC Corp.
6th Author's Name K. Taguchi
6th Author's Affiliation Optoelectronics and High Frequency Device Res. Labs., NEC Corp.
Date 1997/10/14
Paper # LQE97-67-83
Volume (vol) vol.97
Number (no) 313
Page pp.pp.-
#Pages 6
Date of Issue