| Presentation | 1997/6/17 High-quality deep etching of GaN by VUV-UV multi wave length laser ablation J Zhang, K Sugioka, S Wada, H Tashiro, K Toyoda, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High-quality deep etching of GaN thin film by 266nm laser ablation coupled with a vacuum ultraviolet(VUV) Raman laser(133-184nm), followed by treatment in HCl solution, was achieved. The etch rate was as high as 55nm/pulse. Scanning electron microscopy and scanning probe microscopy measurement results indicate that the surface of the etched films was structurally well defined and cleanly patterned. Micro-photoluminescence measurement of ablated samples revealed no severe damage to the optical properties or the crystal structure. The mechanism of VUV-266nm laser ablation of GaN is discussed based on the band structure of GaN. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / multi wave lenght laser / etching / photoluminescence. |
| Paper # | LQE97-28 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1997/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-quality deep etching of GaN by VUV-UV multi wave length laser ablation |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | multi wave lenght laser |
| Keyword(3) | etching |
| Keyword(4) | photoluminescence. |
| 1st Author's Name | J Zhang |
| 1st Author's Affiliation | Institute of Physical and Chemical Research (RIKEN)() |
| 2nd Author's Name | K Sugioka |
| 2nd Author's Affiliation | Institute of Physical and Chemical Research (RIKEN) |
| 3rd Author's Name | S Wada |
| 3rd Author's Affiliation | Institute of Physical and Chemical Research (RIKEN) |
| 4th Author's Name | H Tashiro |
| 4th Author's Affiliation | Institute of Physical and Chemical Research (RIKEN) |
| 5th Author's Name | K Toyoda |
| 5th Author's Affiliation | Institute of Physical and Chemical Research (RIKEN) |
| Date | 1997/6/17 |
| Paper # | LQE97-28 |
| Volume (vol) | vol.97 |
| Number (no) | 100 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |