| Presentation | 1997/6/17 Chemical Beam Epitaxy of GaInNAs/GaAs and its Application to Long-Wavelength Surface Emitting Lasers T Miyamoto, K Takeuchi, F Koyama, K Iga, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A long wavelengh(1.3-1.55μm) vertical cavity surface emitting laser (VCSEL) is expected as a light source for use in newera lightwave systems. In this paper, we propose a GaInNAs/GaAs VCSEL and investigate GaInNAs material grown by chemical beam epitaxy(CBE). The GaInNAs/GaAs VCSEL is estimated to have a threshold current density of less than 300A/cm^2 and a characteristic temperature To over 200K. The emission wavelengh is elongated by a proposed novel GaInNAs/GaAs quantum well structure. Experimentaly, we sucseeded in GaInNAs growth by CBE and estimated the bandgap bowing parameter of GaNAs. The GaInNAs/GaAs QW structure was also grown and we obtained a 1.2μm wavelength emission by photoluminescence measument. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaInNAs / chemical beam epitaxy / surface emitting laser / quantum well |
| Paper # | LQE97-27 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1997/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Chemical Beam Epitaxy of GaInNAs/GaAs and its Application to Long-Wavelength Surface Emitting Lasers |
| Sub Title (in English) | |
| Keyword(1) | GaInNAs |
| Keyword(2) | chemical beam epitaxy |
| Keyword(3) | surface emitting laser |
| Keyword(4) | quantum well |
| 1st Author's Name | T Miyamoto |
| 1st Author's Affiliation | Precision and Intteligence Lab., Tokyo Institute of Technology() |
| 2nd Author's Name | K Takeuchi |
| 2nd Author's Affiliation | Precision and Intteligence Lab., Tokyo Institute of Technology |
| 3rd Author's Name | F Koyama |
| 3rd Author's Affiliation | Precision and Intteligence Lab., Tokyo Institute of Technology |
| 4th Author's Name | K Iga |
| 4th Author's Affiliation | Precision and Intteligence Lab., Tokyo Institute of Technology |
| Date | 1997/6/17 |
| Paper # | LQE97-27 |
| Volume (vol) | vol.97 |
| Number (no) | 100 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |