| Presentation | 1997/6/17 MBE Growth of High Quality Cubic-GaN on GaAs(001) Substrate Prepared by Atomic Hydrogen Treatment Hajime Nagano, Zhixin Qin, Anwei Jia, Yoshinori Kato, Masakazu Kobayashi, Akihiko Yoshikawa, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Growth of high-quality cubic GaN layers on the (001)GaAs substrate was investigated by an rf plasma-assisted molecular beam epitaxy. We paid a particular attention to the effect of substrate-surface cleaning/smoothing on the crystallinity and/or structural properties of GaN epitaxial layers. First, we have found that atomically flat (001)GaAs surface can be obtained by an atomic hydrogen irradiation technique. The surface of the typical atomic-hydrogen treated (001)GaAs consists of a narrow terrace with an acute-angled polygonal terrace with one monolayer step height. Further, it was found that quite high-quality cubic GaN layers can be grown at substrate-temperatures above 680℃. Typical value of FWHM of X-ray rocking curve of (002) plane for 0.3 mm-thick GaN epilayer was as small as 90 arcsec. The reason why such high quality GaN epilayers can be grown has been attributed to the quite large number of monolayer-height steps and kinks on the atomic hydrogen treated (001)GaAs surface. Because such surface will be preferable for uniform and high-density GaN nucleation on the surface at the very initial stage of epitaxial growth of GaN. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | cubic-GaN / atomic hydrogen / hetero epitaxiy |
| Paper # | LQE97-24 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1997/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MBE Growth of High Quality Cubic-GaN on GaAs(001) Substrate Prepared by Atomic Hydrogen Treatment |
| Sub Title (in English) | |
| Keyword(1) | cubic-GaN |
| Keyword(2) | atomic hydrogen |
| Keyword(3) | hetero epitaxiy |
| 1st Author's Name | Hajime Nagano |
| 1st Author's Affiliation | Department of Electrical and Electronics Engineering, Chiba University() |
| 2nd Author's Name | Zhixin Qin |
| 2nd Author's Affiliation | Department of Electrical and Electronics Engineering, Chiba University |
| 3rd Author's Name | Anwei Jia |
| 3rd Author's Affiliation | Department of Electrical and Electronics Engineering, Chiba University |
| 4th Author's Name | Yoshinori Kato |
| 4th Author's Affiliation | Department of Electrical and Electronics Engineering, Chiba University |
| 5th Author's Name | Masakazu Kobayashi |
| 5th Author's Affiliation | Department of Electrical and Electronics Engineering, Chiba University |
| 6th Author's Name | Akihiko Yoshikawa |
| 6th Author's Affiliation | Department of Electrical and Electronics Engineering, Chiba University |
| Date | 1997/6/17 |
| Paper # | LQE97-24 |
| Volume (vol) | vol.97 |
| Number (no) | 100 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |