| Presentation | 1997/6/17 Sublimation Growth and Characterization of Bulk GaN K Nishino, S Kurai, S Tottori, M Nozaki, Y Naoi, S sakai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Bulk growth of GaN was carried out by a sublimation method. Two kinds of bulk crystals were obtained: one was spontaneously nucleated on the source powder("free-standing" bulk), and the other was selectively grown on MOCVD-GaN on sapphire, which is called "quasi-bulk" GaN. The dislocation density measured. by TEM was 10^5-10^6cm^<-2> or lower in both bulk. The carrier concentration estimated from the LO-phonon-plasmon coupling mode of a Raman scatteirng spectra was below 10^<16>cm^<-3>. The resistivity of the free-standing bulk was measured by the four point probe to be 10-15Ωcm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Sublimation method / GaN / TEM / Raman scattering / SIMS |
| Paper # | LQE97-23 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1997/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Sublimation Growth and Characterization of Bulk GaN |
| Sub Title (in English) | |
| Keyword(1) | Sublimation method |
| Keyword(2) | GaN |
| Keyword(3) | TEM |
| Keyword(4) | Raman scattering |
| Keyword(5) | SIMS |
| 1st Author's Name | K Nishino |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Tokushima University() |
| 2nd Author's Name | S Kurai |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokushima University |
| 3rd Author's Name | S Tottori |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokushima University |
| 4th Author's Name | M Nozaki |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Tokushima University |
| 5th Author's Name | Y Naoi |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Tokushima University |
| 6th Author's Name | S sakai |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Tokushima University |
| Date | 1997/6/17 |
| Paper # | LQE97-23 |
| Volume (vol) | vol.97 |
| Number (no) | 100 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |