Presentation 1997/6/17
MOVPE Growth and Optical Characterization of GaPN Alloys
Hiroyuki Yaguchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have studied the growth characteristics in metalorganic vapor phase epitaxy of GaP_<1-x>N_x alloys and found that the nitrogen content in GaP_<1-x>N_x is considerably affected by the nitrogen desorption from the surface during the growth. In addition, we have clarified the radiative transition and carrier relaxation processes and the conduction band edge formation in GaP_<1-x>N_x alloys using various optical measurements.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaP_<1-x>N_x alloy / MOVPE / photoluminescence / bandgap / absorption
Paper # LQE97-22
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Conference Information
Committee LQE
Conference Date 1997/6/17(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) MOVPE Growth and Optical Characterization of GaPN Alloys
Sub Title (in English)
Keyword(1) GaP_<1-x>N_x alloy
Keyword(2) MOVPE
Keyword(3) photoluminescence
Keyword(4) bandgap
Keyword(5) absorption
1st Author's Name Hiroyuki Yaguchi
1st Author's Affiliation Department of Applied Physics, The University of Tokyo()
Date 1997/6/17
Paper # LQE97-22
Volume (vol) vol.97
Number (no) 100
Page pp.pp.-
#Pages 6
Date of Issue