Presentation 1997/6/17
High performance superlattice avalanche photodiodes grown by gas-source MBE
K Makita, I Watanabe, M Tsuji, M Hayashi, T Nakata, K Taguchi,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) InAlGaAs/InAlAs quaternary well superlattice avalanche photo-diodes(SL-APDs) are suitable for 2.5-10Gb/s-range compact and high sensitivity optical receivers because of their high speed and low dark current characteristics. Here we summarize a research trend of gas source molecular beam epitaxy(GS-MBE) for high performance SL-APD fabrication. By using high controllability GSMBE and optimizing device structures, mesa-type SL-APDs have obtained a gain-bandwidth product of 150GHz and multiplied dark current of 6nA, and high reliability planar-type SL-APDs for 10Gb/s long-distance optical receivers have been recently developed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) gas-source / molecular beam epitaxy / superlattice / avalanche photo-diode
Paper # LQE97-19
Date of Issue

Conference Information
Committee LQE
Conference Date 1997/6/17(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High performance superlattice avalanche photodiodes grown by gas-source MBE
Sub Title (in English)
Keyword(1) gas-source
Keyword(2) molecular beam epitaxy
Keyword(3) superlattice
Keyword(4) avalanche photo-diode
1st Author's Name K Makita
1st Author's Affiliation Opto-Electronics Res. Labs., NEC Corp()
2nd Author's Name I Watanabe
2nd Author's Affiliation Opto-Electronics Res. Labs., NEC Corp
3rd Author's Name M Tsuji
3rd Author's Affiliation Opto-Electronics Res. Labs., NEC Corp
4th Author's Name M Hayashi
4th Author's Affiliation Opto-Electronics Res. Labs., NEC Corp
5th Author's Name T Nakata
5th Author's Affiliation Opto-Electronics Res. Labs., NEC Corp
6th Author's Name K Taguchi
6th Author's Affiliation Opto-Electronics Res. Labs., NEC Corp
Date 1997/6/17
Paper # LQE97-19
Volume (vol) vol.97
Number (no) 100
Page pp.pp.-
#Pages 6
Date of Issue