| Presentation | 1997/6/17 Preparation of fluorinated amorphous carbon thin films with low dielectric constant Tohru Hayashi, Tomihiro Amano, Atsushi Masuda, haruo Yokomichi, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Fluorinated amorphous carbon(a-C:F) thin films were prepared using CH_4 and CF_4 gases by the plasma chemical vapor deposition (CVD) method. Electron spin resonance(ESR), infrared(IR) absorption, optical absorption, X-ray photoelectron spectroscopy(XPS) and dielectric constant measurements were carried out in order to investigate the basic properties of these films. XPS measurements revealed that the fluorine concentration of the films increased with increasing R, where R is the ratio of CF_4 flow rate to the total gas flow rate. When R = 0.97, the fluorine concentration increased remarkably to approximately 67 at.%. In this film, CF_3 mode appeared in the IR spectrum and the hydrogen-related modes disappeared. The dielectric constant of the film was estimated to be 2.2 at 1MHz and the line width of the ESR spectrum of the film, 4.2 mT, was broader than that of the other films. We also discuss the effect of thermal annealing on dielectric constant and the fluorine bonding configuration. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | fluorinated amorphous carbon(a-C:F) / dielectric constant / dangling bond / C-F bond / thermal annealing |
| Paper # | LQE97-18 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1997/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation of fluorinated amorphous carbon thin films with low dielectric constant |
| Sub Title (in English) | |
| Keyword(1) | fluorinated amorphous carbon(a-C:F) |
| Keyword(2) | dielectric constant |
| Keyword(3) | dangling bond |
| Keyword(4) | C-F bond |
| Keyword(5) | thermal annealing |
| 1st Author's Name | Tohru Hayashi |
| 1st Author's Affiliation | Department of Electronics and Informatics, Toyama Prefectural University() |
| 2nd Author's Name | Tomihiro Amano |
| 2nd Author's Affiliation | Department of Electronics and Informatics, Toyama Prefectural University |
| 3rd Author's Name | Atsushi Masuda |
| 3rd Author's Affiliation | School of Materials Science, Japan Advanced Institute of Science and Technology |
| 4th Author's Name | haruo Yokomichi |
| 4th Author's Affiliation | Department of Electronics and Informatics, Toyama Prefectural University |
| Date | 1997/6/17 |
| Paper # | LQE97-18 |
| Volume (vol) | vol.97 |
| Number (no) | 100 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |