Presentation 1997/7/4
1.3-μm-wavelength multiple-quantum-well lasers on (211) InP substrates
Y. Okuno, T. Tsuchiya, M. Okai,
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Abstract(in English) We demonstrate the first fabrication of a long-wavelength laser on a (211)A InP substrate, with the expectation of reducing threshold current density. We found that unstrained InGaAsP SQWs whose composition is appropriate for laser MQWs could be fabricated with good optical properties, although the properties of a very thin SQW and InGaAs SQWs were degraded. A laser that had an unstrained MQW active layer emitting at 1.3μm was fabricated. The performance of this laser was comparable to what can be obtained from the same type of laser on a (1OO) substrate, such as a jth of 90O A/cm^2 and a characteristic temperature of 50K. These results suggest that long-wavelength lasers with satisfactory quality can be fabricated on (211)A substrates.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) (211)A InP substrate / threshold current density / 1.3-μm unstrained MQW laser
Paper # LQE97-30
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Conference Information
Committee LQE
Conference Date 1997/7/4(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 1.3-μm-wavelength multiple-quantum-well lasers on (211) InP substrates
Sub Title (in English)
Keyword(1) (211)A InP substrate
Keyword(2) threshold current density
Keyword(3) 1.3-μm unstrained MQW laser
1st Author's Name Y. Okuno
1st Author's Affiliation Central Research Laboratory, Hitachi, Ltd.()
2nd Author's Name T. Tsuchiya
2nd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
3rd Author's Name M. Okai
3rd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
Date 1997/7/4
Paper # LQE97-30
Volume (vol) vol.97
Number (no) 153
Page pp.pp.-
#Pages 6
Date of Issue