| Presentation | 1997/7/4 Characteristic improvement of InGaAs/GaAs strained quantum well lasers using p-type carbon delta doping Nobuaki HATORI, Akimasa MIZUTANI, Nobuhiko NISHIYAMA, Fumio KOYAMA, Kenichi IGA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have proposed a p-type delta doped InGaAs/GaAs quantum well structure for low threshold vertical-cavity surface-emitting lasers (VCSELs). We established carbon auto doping technique in AIAs by using low-pressure metalorganic chemical vapor deposition. Edge emitting lasers having p-type delta doped three InGaAs/GaAs quantum wells were fabricated, and threshold current density was reduced to 154A/cm^2 (52A/cm^2/well). Threshold reduction and high speed modulation of VCSELs is expected by the proposed p-type delta doped quantum wells. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | p-type delta doped quantum well / carbon auto doping / surface-emitting laser / metal-organic chemical vapor deposition |
| Paper # | LQE97-29 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 1997/7/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characteristic improvement of InGaAs/GaAs strained quantum well lasers using p-type carbon delta doping |
| Sub Title (in English) | |
| Keyword(1) | p-type delta doped quantum well |
| Keyword(2) | carbon auto doping |
| Keyword(3) | surface-emitting laser |
| Keyword(4) | metal-organic chemical vapor deposition |
| 1st Author's Name | Nobuaki HATORI |
| 1st Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology() |
| 2nd Author's Name | Akimasa MIZUTANI |
| 2nd Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology |
| 3rd Author's Name | Nobuhiko NISHIYAMA |
| 3rd Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology |
| 4th Author's Name | Fumio KOYAMA |
| 4th Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology |
| 5th Author's Name | Kenichi IGA |
| 5th Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology |
| Date | 1997/7/4 |
| Paper # | LQE97-29 |
| Volume (vol) | vol.97 |
| Number (no) | 153 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |