Presentation 1994/12/14
External cavity semiconductor laser with broad tunable range and narrow spectral linewidth
Tomohiro Kiguchi, Akira Uematsu, Masao Kitano, Hisanao Ogura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We produced anti reflection films by evaporating SiO to the front surface of commercial semiconductors(LD)to suppress the intrinsic laser oscillation,and constructed an external cavity laser system with a Littrow grating.We can control the oscillating wavelength more than 25nm for a 780nm LD.We demonstrate a single LD can be tuned to the three different alkali-metal atom resonance lines:Rb-D_2(780.Onm),K-D_1(769.9nm)and K-D_2(766.5nm).The spectral linewidth of the LD is confirmed to be narrowed down to about 1 MHz using saturated absorption spectroscopy.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Semiconductor laser / Antireflection films / Broad tunable range / Narrow spectral linewidth / Alkali metal atoms
Paper # LQE94-65
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Committee LQE
Conference Date 1994/12/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) External cavity semiconductor laser with broad tunable range and narrow spectral linewidth
Sub Title (in English)
Keyword(1) Semiconductor laser
Keyword(2) Antireflection films
Keyword(3) Broad tunable range
Keyword(4) Narrow spectral linewidth
Keyword(5) Alkali metal atoms
1st Author's Name Tomohiro Kiguchi
1st Author's Affiliation Faculty of Engineering,Kyoto University()
2nd Author's Name Akira Uematsu
2nd Author's Affiliation Faculty of Engineering,Kyoto University
3rd Author's Name Masao Kitano
3rd Author's Affiliation Faculty of Engineering,Kyoto University
4th Author's Name Hisanao Ogura
4th Author's Affiliation Faculty of Engineering,Kyoto University
Date 1994/12/14
Paper # LQE94-65
Volume (vol) vol.94
Number (no) 395
Page pp.pp.-
#Pages 6
Date of Issue