Presentation 1994/10/12
Polarization bistability in near infrared semiconductor lasers by injecting light
Seiji Ohno, Tatehisa Ohta, Takumi Ichinose, Masaru Mamiya,
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Abstract(in English) Polarized light outputs of the initially TE mode oscillating semiconductor laser were controlled by TM wave injection.780nm SAS- type LDs and 830nm CSP-type LDs are employed in the experiments. Then hysteresis loop in the light input-output characteristics of the 830nm CSP-type LDs was observed,and optical memory operation was performed as an application of this bistability.Finally an original theoretical model based on the mode hopping on the injection light wavelength was employed to the unique bistable operation of the laser.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) TM wave injection / TM amplifier / TE suppression / Polarization bistability / Mode hopping
Paper # LQE94-43
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Committee LQE
Conference Date 1994/10/12(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Polarization bistability in near infrared semiconductor lasers by injecting light
Sub Title (in English)
Keyword(1) TM wave injection
Keyword(2) TM amplifier
Keyword(3) TE suppression
Keyword(4) Polarization bistability
Keyword(5) Mode hopping
1st Author's Name Seiji Ohno
1st Author's Affiliation Faculty of Engineering,Doshisha University()
2nd Author's Name Tatehisa Ohta
2nd Author's Affiliation Faculty of Engineering,Doshisha University
3rd Author's Name Takumi Ichinose
3rd Author's Affiliation Faculty of Engineering,Doshisha University
4th Author's Name Masaru Mamiya
4th Author's Affiliation Research Division,IDECIZUMI Corp.
Date 1994/10/12
Paper # LQE94-43
Volume (vol) vol.94
Number (no) 269
Page pp.pp.-
#Pages 6
Date of Issue