Presentation | 2000/12/7 Two-dimensional Photonic Crystals on Oxide Using SOI Substrate A. Shinya, M. Notomi, I. Yokohama, C. Takahashi, J. Takahashi, T. Tamamura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Two-dimensional photonic crystal(2D-PhC)on oxide can be easily incorporated into optical integrated circuits. Although an asymmetrical structure(air/PhC/oxide)is advantageous for easy fabrication, it has been pointed out that such a structure may have no photonic band gap(PBG). To clarify characteristics of the asymmetrical structure, we calculated the band structure using a three-dimensional(3D)FDTD method and measured the transmission characteristics of a fabricated 2D Si-PhC on oxide. The calculations show that we can use the quasi PBG even in asymmetrical structure when the PhC thickness satisfies the single-mode condition. The measured transmission characteristics correspond to the calculated band structure and show the existence of the quasi PBG. These results show that asymmetrical 2D Si-PhC-on-oxide structure is available for application to various optical devices. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | 2D-Photonic Crystal / FDTD method / finite-thickness / asymmetrical structure / SOI substrate |
Paper # | OPE2000-108 |
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Conference Information | |
Committee | OPE |
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Conference Date | 2000/12/7(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Optoelectronics (OPE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Two-dimensional Photonic Crystals on Oxide Using SOI Substrate |
Sub Title (in English) | |
Keyword(1) | 2D-Photonic Crystal |
Keyword(2) | FDTD method |
Keyword(3) | finite-thickness |
Keyword(4) | asymmetrical structure |
Keyword(5) | SOI substrate |
1st Author's Name | A. Shinya |
1st Author's Affiliation | NTT Basic Research Laboratories() |
2nd Author's Name | M. Notomi |
2nd Author's Affiliation | NTT Basic Research Laboratories |
3rd Author's Name | I. Yokohama |
3rd Author's Affiliation | NTT Basic Research Laboratories |
4th Author's Name | C. Takahashi |
4th Author's Affiliation | NTT Telecommunications Energy laboratories |
5th Author's Name | J. Takahashi |
5th Author's Affiliation | NTT Telecommunications Energy laboratories |
6th Author's Name | T. Tamamura |
6th Author's Affiliation | NTT Basic Research Laboratories:(Present address)NTT Electronics Corporation |
Date | 2000/12/7 |
Paper # | OPE2000-108 |
Volume (vol) | vol.100 |
Number (no) | 494 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |