| Presentation | 2000/5/19 1.55 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene DBR Lasers Mothi Madhan RAJ, Jorg WIEDMANN, Yoshikazu SAKA, Koji EBIHARA, Kensuke MATSUI, Shigeo TAMURA, Shigehisa ARAI, |
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| PDF Download Page | PDF download Page Link | |
| Abstract(in Japanese) | (See Japanese page) | |
| Abstract(in English) | 1.55 μm wavelength GaInAsP lasers with deeply ethced 5λ4-semiconductor/3λ4-Benzocyclobutene (BCB) DBR showing low threshold current and high differential quantum efficiency were successfully obtained with high uniformity. Threshold current as low as 7.2 mA and differential quantum efficiency as high as 50% from the front cleaved facet were obtained with 160 μm-long active region and 15-DBR reflectors on the rear side. The reflectivity was estimated to be as high as 95% from the threshold current dependence on the active region length. Finally, a preliminary aging test under a room temperature CW condition showed stable operation for duration in excess of 1500 hours. By introducing a coupled-cavity structure to this DBR laser a single mode operation with a sub-mode suppression ratio (SMSR) of 36 dB was obtained at I=1.8I_ | . |
| Keyword(in Japanese) | (See Japanese page) | |
| Keyword(in English) | DBR laser / GaInAsP/InP / CH_4/H_2-RIE / benzocyclobutene | |
| Paper # | OPE2000-7 | |
| Date of Issue |
| Conference Information | |
| Committee | OPE |
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| Conference Date | 2000/5/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Optoelectronics (OPE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 1.55 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene DBR Lasers |
| Sub Title (in English) | |
| Keyword(1) | DBR laser |
| Keyword(2) | GaInAsP/InP |
| Keyword(3) | CH_4/H_2-RIE |
| Keyword(4) | benzocyclobutene |
| 1st Author's Name | Mothi Madhan RAJ |
| 1st Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology() |
| 2nd Author's Name | Jorg WIEDMANN |
| 2nd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 3rd Author's Name | Yoshikazu SAKA |
| 3rd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 4th Author's Name | Koji EBIHARA |
| 4th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 5th Author's Name | Kensuke MATSUI |
| 5th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 6th Author's Name | Shigeo TAMURA |
| 6th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 7th Author's Name | Shigehisa ARAI |
| 7th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| Date | 2000/5/19 |
| Paper # | OPE2000-7 |
| Volume (vol) | vol.100 |
| Number (no) | 95 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |