Presentation 1999/7/9
Fabrication of GaN/AlGaN distributed Bragg reflector for VCSEL
Naoyuki Nakada, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jhnbo, Masayoshi Umeno,
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Abstract(in English) GaN/AlGaN distributed Bragg reflectors (DBR) were grown on sapphire substrate. The reflectivity of DBR was improved after an introduction of GaN/AlGaN strained layer superlattices and the generation of cracks was effectively suppressed. On the other hand, the characteristics of the InGaN light emitting diode (LED) have been improved by use of the GaN/AlGaN DBR. For the InGaN MQWLED consisting of DBR, the output power of 120μW and the external quantum efficiency of 0.23% were obtained which is about 1.5 times as large as those of the conventional LED.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / AlGaN / MOCVD / dustributed Bragg reflector / VCSEL / LED
Paper # OPE99-38
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Committee OPE
Conference Date 1999/7/9(1days)
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Registration To Optoelectronics (OPE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of GaN/AlGaN distributed Bragg reflector for VCSEL
Sub Title (in English)
Keyword(1) GaN
Keyword(2) AlGaN
Keyword(3) MOCVD
Keyword(4) dustributed Bragg reflector
Keyword(5) VCSEL
Keyword(6) LED
1st Author's Name Naoyuki Nakada
1st Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology()
2nd Author's Name Hiroyasu Ishikawa
2nd Author's Affiliation Research Center for Micro-Structure Devices, Nagoya Institute of Technology
3rd Author's Name Takashi Egawa
3rd Author's Affiliation Research Center for Micro-Structure Devices, Nagoya Institute of Technology
4th Author's Name Takashi Jhnbo
4th Author's Affiliation Department of Environmental Teclmology and Urban Plarming, Nagoya Institute of Technology
5th Author's Name Masayoshi Umeno
5th Author's Affiliation Department of Electrical and Computer Engineering : Research Center for Micro-Structure Devices, Nagoya Institute of Technology
Date 1999/7/9
Paper # OPE99-38
Volume (vol) vol.99
Number (no) 172
Page pp.pp.-
#Pages 6
Date of Issue