| Presentation | 1999/1/19 Effect of built-in field on intersubband transition in GaN quantum wells Nobuo Suzuki, Norio Iizuka, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The intersubband transition (ISBT) in nitride quantum wells is expected to be applicable to ultrafast optical switches. Effect of the built-in field caused by the piezoelectric effect and the spontaneous polarization inherent in nitrides on the ISBT is studied. Measured intersubband absorption wavelengths of Al_<0.65>Ga_<0.35>N/GaN multiquantum wells suggest the existence of a built-in field of about 2MV/cm. The built-in field in a thick well drastically shortens the ISBT wavelength and increases the intersubband relaxation time. On the other hand, the built-in field in barriers affects the formation of the second subband in thin wells. Suppression of the field in the barriers is important in achieving a short wavelength ISBT. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | optical switches / intersubband transition / relaxation time / piezoelectric effect / spontaneous polarization / GaN |
| Paper # | PS98-79,OPE98-128,LQE98-121 |
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| Conference Information | |
| Committee | OPE |
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| Conference Date | 1999/1/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Optoelectronics (OPE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of built-in field on intersubband transition in GaN quantum wells |
| Sub Title (in English) | |
| Keyword(1) | optical switches |
| Keyword(2) | intersubband transition |
| Keyword(3) | relaxation time |
| Keyword(4) | piezoelectric effect |
| Keyword(5) | spontaneous polarization |
| Keyword(6) | GaN |
| 1st Author's Name | Nobuo Suzuki |
| 1st Author's Affiliation | Advanced Semiconductor Devices Research Labs., Toshiba Corp.() |
| 2nd Author's Name | Norio Iizuka |
| 2nd Author's Affiliation | Advanced Semiconductor Devices Research Labs., Toshiba Corp. |
| Date | 1999/1/19 |
| Paper # | PS98-79,OPE98-128,LQE98-121 |
| Volume (vol) | vol.98 |
| Number (no) | 507 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |