Presentation 1998/5/14
Gate Length Dependence of Optical Response Characteristics in Optically Controlled MOSFET
T YAMAGATA, K KINOSHITA, M SAKURAI, Y NITTA, K SHIMOMURA,
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Abstract(in English) We have measured the gate length dependence of the optical response characteristics in optically controlled MOSFET. By changing the pattern of optical absorption region, the leakage current was reduced remarkably, and we obtained almost same current-voltage characteristics in metal gate MOSFET. We have measured the optical response characteristics, such as modulation current, on-off ratio and responsivity in optically controlled MOSFET, and we obtained the high current modulation and responsivity by reducing the gate length of MOSFET region.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Optical Interconnection / Direct Wafer Bonding Technique / Photo Detector / MOSFET
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Committee OPE
Conference Date 1998/5/14(1days)
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Registration To Optoelectronics (OPE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Gate Length Dependence of Optical Response Characteristics in Optically Controlled MOSFET
Sub Title (in English)
Keyword(1) Optical Interconnection
Keyword(2) Direct Wafer Bonding Technique
Keyword(3) Photo Detector
Keyword(4) MOSFET
1st Author's Name T YAMAGATA
1st Author's Affiliation Department of Electrical and Electronics Engineering, Sophia University()
2nd Author's Name K KINOSHITA
2nd Author's Affiliation Department of Electrical and Electronics Engineering, Sophia University
3rd Author's Name M SAKURAI
3rd Author's Affiliation Department of Electrical and Electronics Engineering, Sophia University
4th Author's Name Y NITTA
4th Author's Affiliation Department of Electrical and Electronics Engineering, Sophia University
5th Author's Name K SHIMOMURA
5th Author's Affiliation Department of Electrical and Electronics Engineering, Sophia University
Date 1998/5/14
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Volume (vol) vol.98
Number (no) 43
Page pp.pp.-
#Pages 6
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