Presentation 1994/9/16
Temperature Characteristics of LD-transceiver(LEAD-diode)
Yasumasa Suzaki, Shinichi Matsumoto, Yuichi Tohmori, Takeshi Kurosaki, Mitsuo Fukuda,
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Abstract(in English) In optical subscriber systems,especially in TCM(Time Compression Multiplexing)system,the LD-transceiver(Light Emitted And Detected diode,LEAD-diode)is very effective to reduce the cost of these optical compornents,because of decreasing optical parts and size. In this paper,we describe the design of the LEAD-diode which can show good performances not only as laser but also as photodetecter and we demonstrated good LD and PD performances of this LEAD-diode. We reduced the capacitance of the LEAD-diode using Fe-doped InP semi-insulating buried-heterostructures(SI-BH)less than that using PN buried-structures.Characteristics foucusing on the temperature variation are discussed experimentally.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) LD-transceiver / bulk-active layer / facet coating / SI-BH
Paper # OPE94-59
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Committee OPE
Conference Date 1994/9/16(1days)
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Paper Information
Registration To Optoelectronics (OPE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Temperature Characteristics of LD-transceiver(LEAD-diode)
Sub Title (in English)
Keyword(1) LD-transceiver
Keyword(2) bulk-active layer
Keyword(3) facet coating
Keyword(4) SI-BH
1st Author's Name Yasumasa Suzaki
1st Author's Affiliation NTT Opto-electronics Laboratries()
2nd Author's Name Shinichi Matsumoto
2nd Author's Affiliation NTT Opto-electronics Laboratries
3rd Author's Name Yuichi Tohmori
3rd Author's Affiliation NTT Opto-electronics Laboratries
4th Author's Name Takeshi Kurosaki
4th Author's Affiliation NTT Opto-electronics Laboratries
5th Author's Name Mitsuo Fukuda
5th Author's Affiliation NTT Opto-electronics Laboratries
Date 1994/9/16
Paper # OPE94-59
Volume (vol) vol.94
Number (no) 237
Page pp.pp.-
#Pages 6
Date of Issue