| Presentation | 1997/1/17 Fabrication of Nitride Based Laser Diodes and Analysis of Dislocation Motion in Nitride Based Materials L. Sugiura, M. Onomura, K. Itaya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrate room temperature pulsed operation of nitride based multi-quantum-well (MQW) laser diodes with cleaved mirror facets grown on a conventional c-face sapphire substrate. A single peak emission, at a wavelength of 417.5nm, with a full width at half-maximum of 0.15nm, was obtained. The threshold current density of the laser was 50kA/cm^2. The reliability of nitride based light emitting devices was also investigated from the theoretical viewpoint of dislocation motion. The dislocation velocities of the nitride based materials was found to be much lower than that of other light emitting materials, such as GaAs or InGaAsP, around room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN-based materials / semiconductor laser diodes / dislocation motion |
| Paper # | OPE96-143,LQE97-141 |
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| Conference Information | |
| Committee | OPE |
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| Conference Date | 1997/1/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Optoelectronics (OPE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of Nitride Based Laser Diodes and Analysis of Dislocation Motion in Nitride Based Materials |
| Sub Title (in English) | |
| Keyword(1) | GaN-based materials |
| Keyword(2) | semiconductor laser diodes |
| Keyword(3) | dislocation motion |
| 1st Author's Name | L. Sugiura |
| 1st Author's Affiliation | Toshiba Research & Developement Center, Materials and Devices Laboratories() |
| 2nd Author's Name | M. Onomura |
| 2nd Author's Affiliation | Toshiba Research & Developement Center, Materials and Devices Laboratories |
| 3rd Author's Name | K. Itaya |
| 3rd Author's Affiliation | Toshiba Research & Developement Center, Materials and Devices Laboratories |
| Date | 1997/1/17 |
| Paper # | OPE96-143,LQE97-141 |
| Volume (vol) | vol.96 |
| Number (no) | 445 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |