| Presentation | 1997/1/16 Characterization and growth of ZnMgSSe laser diode H. Okuyama, A. Ishibashi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The basic model of MBE growth of ZnMgSSe at 275℃ is considered. The net flux intensity is expressed by the product of the flux intensity and the maximum sticking coefficient for the cracked or heated beam flux. The surface of the crystal is divided into a surface covered with group II elements (surface II) and a surface covered with group VI elements (surface VI) and the adatom density is almost the same at surface II and surface VI. The desorption of these adatoms is expressed by considering the effect of cluster such as S_2 and Se_2. The desorption from the surface is disregarded because the growth temperature is low. The experimental composition, growth rate of ZnMgSSe agrees with the value calculated using this theory and the tendency of these properties when c (2×2) is observed are different from the tendency when (2×1) is observed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ZnMgSSe / laser diode / MBE / adatom / incorporation / desorption |
| Paper # | OPE96-132,LQE97-130 |
| Date of Issue |
| Conference Information | |
| Committee | OPE |
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| Conference Date | 1997/1/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Optoelectronics (OPE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization and growth of ZnMgSSe laser diode |
| Sub Title (in English) | |
| Keyword(1) | ZnMgSSe |
| Keyword(2) | laser diode |
| Keyword(3) | MBE |
| Keyword(4) | adatom |
| Keyword(5) | incorporation |
| Keyword(6) | desorption |
| 1st Author's Name | H. Okuyama |
| 1st Author's Affiliation | Sony Corporation Research Center() |
| 2nd Author's Name | A. Ishibashi |
| 2nd Author's Affiliation | Sony Corporation Research Center |
| Date | 1997/1/16 |
| Paper # | OPE96-132,LQE97-130 |
| Volume (vol) | vol.96 |
| Number (no) | 444 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |