| Presentation | 1995/11/21 Effects of Buffer Layers on GaN MOVPE Growth Akihiko Ishibashi, Hidemi Takeishi, Masaya Mannoh, Yassfumi Yabuuchi, Yuzaburoh Ban, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The improvement of crystallinity and the creation of native defects for two-step MOVPE grown GaN films have been investigated, taking account of the change of the GaN buffer layer crystallinity during thermal annealing. The buffer layer grown at 500℃ had poly crystalline quality, which was changed to single crystalline quality by thermal annealing. The surface roughness of the GaN film grown on the buffer layer increased, and the defects, such as dislocations or twins, were created in the GaN film. On the other hand the bufferlayer grown at 600℃ had single crystalline quality and it was hardly changed during annealing. In this case, there were only dislocations in the GaN films grown on the buffer layer. Therefore, it is supposed that using the buffer layer with highly crystalline surface, high quality GaN films, which show strong band edge emission in photoluminescence and high resistivity, can be grown. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOVPE / GaN / GaN buffer layer / sapphire substrate / thermal annealing / defect |
| Paper # | OPE95-98 |
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| Conference Information | |
| Committee | OPE |
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| Conference Date | 1995/11/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Optoelectronics (OPE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of Buffer Layers on GaN MOVPE Growth |
| Sub Title (in English) | |
| Keyword(1) | MOVPE |
| Keyword(2) | GaN |
| Keyword(3) | GaN buffer layer |
| Keyword(4) | sapphire substrate |
| Keyword(5) | thermal annealing |
| Keyword(6) | defect |
| 1st Author's Name | Akihiko Ishibashi |
| 1st Author's Affiliation | Semiconductor research Center, Matsushita Electric Industrial Co., Ltd.,() |
| 2nd Author's Name | Hidemi Takeishi |
| 2nd Author's Affiliation | Semiconductor research Center, Matsushita Electric Industrial Co., Ltd., |
| 3rd Author's Name | Masaya Mannoh |
| 3rd Author's Affiliation | Semiconductor research Center, Matsushita Electric Industrial Co., Ltd., |
| 4th Author's Name | Yassfumi Yabuuchi |
| 4th Author's Affiliation | Matsushita Technoreserch Inc. |
| 5th Author's Name | Yuzaburoh Ban |
| 5th Author's Affiliation | Semiconductor research Center, Matsushita Electric Industrial Co., Ltd., |
| Date | 1995/11/21 |
| Paper # | OPE95-98 |
| Volume (vol) | vol.95 |
| Number (no) | 377 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |