Presentation 1997/7/25
A GaAs Monolithic Bipolar Variable Attenuator with Improved Control Linearity : A key circuit to degital-control microwave signal processing
Y. SUZUKI, T. OHIRA, H. OGAWA,
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Abstract(in English) This paper presents a novel circuit topology to improve control linearity in wide range variable attenuators. Five pairs of cold MESFETs are employed as variable devices. They have different gate width and their drain and source are connected in parallel to the quadrature hybrid. The gate of each MESFET is driven proportionally by the external dc control voltage. The gate width and voltage ratio of each MESFET is optimized in circuit design to achieve high linearity. A prototype bipolar variable attenuator is fabricated using GaAs MMIC process. The control performance is measured in the S band frequency range. Sensitivity deviation within +/- 5 % is successfully observed for over 50 % of the full varistor control range.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Microwave Signal Processing / Variable Attenuator / Control Linearity / MMIC
Paper # CQ97-29
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Committee CQ
Conference Date 1997/7/25(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A GaAs Monolithic Bipolar Variable Attenuator with Improved Control Linearity : A key circuit to degital-control microwave signal processing
Sub Title (in English)
Keyword(1) Microwave Signal Processing
Keyword(2) Variable Attenuator
Keyword(3) Control Linearity
Keyword(4) MMIC
1st Author's Name Y. SUZUKI
1st Author's Affiliation NTT Wireless Systems Laboratories()
2nd Author's Name T. OHIRA
2nd Author's Affiliation NTT Wireless Systems Laboratories
3rd Author's Name H. OGAWA
3rd Author's Affiliation NTT Wireless Systems Laboratories
Date 1997/7/25
Paper # CQ97-29
Volume (vol) vol.97
Number (no) 190
Page pp.pp.-
#Pages 6
Date of Issue