| Presentation | 2001/2/16 Surge Immunity of Three-Phase High Power-Factor Rectifier Yoshihiro GOTO, Masao KOZUTSUMI, Naoki MURAKAMI, Tsutomu OGATA, Yoshinori SHIMANO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We compared the surge immunity of the PWM converter of a three-phase 200V input rectifier for powering telecommunications equipment, with the surge immunity of the diode bridge rectification circuit. As a result, the PWM converter has smaller surge immunity than the diode rectification circuit for applying a switching surges, which has a relatively long duration on the order of several ms and thus represents a large amount of energy. It is possible to increase the PWM converter surge immunity equivalent to that obtained with the diode rectification circuit without increase of power dissipation by monitoring the input voltage and the input current, and when these exceed their prescribed values, stopping the PWM converter operation, thereby making the PWM converter function as a diode bridge rectificaton circuit. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | surge immunity / switching surge / PWM converter / Power Factor Correction circuit / MOSFET |
| Paper # | EE2000-67 |
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| Conference Information | |
| Committee | EE |
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| Conference Date | 2001/2/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Energy Engineering in Electronics and Communications (EE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surge Immunity of Three-Phase High Power-Factor Rectifier |
| Sub Title (in English) | |
| Keyword(1) | surge immunity |
| Keyword(2) | switching surge |
| Keyword(3) | PWM converter |
| Keyword(4) | Power Factor Correction circuit |
| Keyword(5) | MOSFET |
| 1st Author's Name | Yoshihiro GOTO |
| 1st Author's Affiliation | NTT FACILITIES, INC.() |
| 2nd Author's Name | Masao KOZUTSUMI |
| 2nd Author's Affiliation | NTT FACILITIES, INC. |
| 3rd Author's Name | Naoki MURAKAMI |
| 3rd Author's Affiliation | NTT FACILITIES, INC. |
| 4th Author's Name | Tsutomu OGATA |
| 4th Author's Affiliation | NTT FACILITIES, INC. |
| 5th Author's Name | Yoshinori SHIMANO |
| 5th Author's Affiliation | NTT FACILITIES, INC. |
| Date | 2001/2/16 |
| Paper # | EE2000-67 |
| Volume (vol) | vol.100 |
| Number (no) | 628 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |