| Presentation | 2002/1/17 Near-Infrared Intersubband Absorption in MBE-Grown GaN/AlN Multiple Quantum Wells Nobuo SUZUKI, Norio IIZUKA, Kei KANEKO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The intersubband transition (ISBT) in GaN is expected to be applicable to ultrafast optical devices. By adopting MBE growth and AlN barrier layers. the intersubband absorption in the optical communication wavelength range has been realized. The absorption spectra with a peak wavelength of 1.3-1.5μm were composed of three Lorentzian components representing ± 1-monolayer thickness variation. The FWHM of the spectral components was 80-100 meV.The ISBT wavelengths were strongly affected by the electric field (≥5 MV/cm) caused by the piezoelectric effect and the spontancous polarization. The measured wavelengths fit well to the theoretical values calculated assuming the field sharing model (a zero-potential drop across one period of the quantum well) and ± 1-monolayer graded regions at each hetero interface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | optical switches / quantum wells / intersubband transition / piezoelectric effect / GaN |
| Paper # | 2001-PS-85,2001-OFT-82,2001-OPE-126,2001-LQE-112 |
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| Conference Information | |
| Committee | OFT |
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| Conference Date | 2002/1/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Optical Fiber Technology (OFT) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Near-Infrared Intersubband Absorption in MBE-Grown GaN/AlN Multiple Quantum Wells |
| Sub Title (in English) | |
| Keyword(1) | optical switches |
| Keyword(2) | quantum wells |
| Keyword(3) | intersubband transition |
| Keyword(4) | piezoelectric effect |
| Keyword(5) | GaN |
| 1st Author's Name | Nobuo SUZUKI |
| 1st Author's Affiliation | Advanced Discrete Semiconductor Technology Lab., Corporate R & D Center, Toshiba Corp.() |
| 2nd Author's Name | Norio IIZUKA |
| 2nd Author's Affiliation | Advanced Discrete Semiconductor Technology Lab., Corporate R & D Center, Toshiba Corp. |
| 3rd Author's Name | Kei KANEKO |
| 3rd Author's Affiliation | Advanced Discrete Semiconductor Technology Lab., Corporate R & D Center, Toshiba Corp. |
| Date | 2002/1/17 |
| Paper # | 2001-PS-85,2001-OFT-82,2001-OPE-126,2001-LQE-112 |
| Volume (vol) | vol.101 |
| Number (no) | 586 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |