Presentation 2001/12/14
Study of Electron-Beam Probe for LSI Process Failure Analysis
Tatsuya ISHII, Takeshi SATO,
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Abstract(in English) The Electron Beam (EB) probe is produced for LSI process failure analysis, which becomes short TAT : Turn-Around-Time analysis tool at LSI plant. To develop that, novel technique that acquire the voltage contrast at the single time image acquisition on the insulated film was studied. We verified it is available method by experiment using actual failure chip. This technique performed to observe the voltage logic state under the single cycle function on passivated devices, and realize the low cast EB test syslem for wafer process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) EB Probe / EB Tester / LSI / Wafer Process / Failure Analysis
Paper # R2001-31,SSS2001-26
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Conference Information
Committee SSS
Conference Date 2001/12/14(1days)
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Registration To Safety (SSS)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study of Electron-Beam Probe for LSI Process Failure Analysis
Sub Title (in English)
Keyword(1) EB Probe
Keyword(2) EB Tester
Keyword(3) LSI
Keyword(4) Wafer Process
Keyword(5) Failure Analysis
1st Author's Name Tatsuya ISHII
1st Author's Affiliation Semiconductor Operations Div., Seiko Epson Corp.()
2nd Author's Name Takeshi SATO
2nd Author's Affiliation Design and Engineering Dept., JEOL Technics Ltd.
Date 2001/12/14
Paper # R2001-31,SSS2001-26
Volume (vol) vol.101
Number (no) 527
Page pp.pp.-
#Pages 8
Date of Issue