Presentation | 2001/12/14 Study of Electron-Beam Probe for LSI Process Failure Analysis Tatsuya ISHII, Takeshi SATO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The Electron Beam (EB) probe is produced for LSI process failure analysis, which becomes short TAT : Turn-Around-Time analysis tool at LSI plant. To develop that, novel technique that acquire the voltage contrast at the single time image acquisition on the insulated film was studied. We verified it is available method by experiment using actual failure chip. This technique performed to observe the voltage logic state under the single cycle function on passivated devices, and realize the low cast EB test syslem for wafer process. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | EB Probe / EB Tester / LSI / Wafer Process / Failure Analysis |
Paper # | R2001-31,SSS2001-26 |
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Committee | SSS |
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Conference Date | 2001/12/14(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Safety (SSS) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Study of Electron-Beam Probe for LSI Process Failure Analysis |
Sub Title (in English) | |
Keyword(1) | EB Probe |
Keyword(2) | EB Tester |
Keyword(3) | LSI |
Keyword(4) | Wafer Process |
Keyword(5) | Failure Analysis |
1st Author's Name | Tatsuya ISHII |
1st Author's Affiliation | Semiconductor Operations Div., Seiko Epson Corp.() |
2nd Author's Name | Takeshi SATO |
2nd Author's Affiliation | Design and Engineering Dept., JEOL Technics Ltd. |
Date | 2001/12/14 |
Paper # | R2001-31,SSS2001-26 |
Volume (vol) | vol.101 |
Number (no) | 527 |
Page | pp.pp.- |
#Pages | 8 |
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