Presentation 2004/5/21
Transverse-Multimode Characteristic on Blue-Violet InGaN Semiconductor Lasers
Hironobu SAKAGUCHI, Kenjiro MATSUOKA, Minoru YAMADA,
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Abstract(in English) We report on the electromagnetic field and far field pattern(FFP) under transverse-multimode operation of blue-violet InGaN semiconductor lasers. Since GaN used as substrate on InGaN lasers is transparence at wavelength of 400nm band, it is difficult to make the transverse high order mode cutoff and electromagnetic field may leak into the substrate direction. These phenomena are theoretically analyzed. In addition, despite the propagation gain for the transverse high order mode is smaller than for the transverse fundamental mode, the high order mode may oscillate as well as the fundamental mode by asymmetric gain. In this result, FFP may be disturbed. This phenomenon is theoretically analyzed, and theoretical and experimental results are compared.
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Keyword(in English) blue-violet InGaN semiconductor laser / transverse-mode / multimode / asymmetric gain / mode competition
Paper # LQE2004-7
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Committee LQE
Conference Date 2004/5/21(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Transverse-Multimode Characteristic on Blue-Violet InGaN Semiconductor Lasers
Sub Title (in English)
Keyword(1) blue-violet InGaN semiconductor laser
Keyword(2) transverse-mode
Keyword(3) multimode
Keyword(4) asymmetric gain
Keyword(5) mode competition
1st Author's Name Hironobu SAKAGUCHI
1st Author's Affiliation Faculty of Engineering, Kanazawa University()
2nd Author's Name Kenjiro MATSUOKA
2nd Author's Affiliation Faculty of Engineering, Kanazawa University
3rd Author's Name Minoru YAMADA
3rd Author's Affiliation Faculty of Engineering, Kanazawa University
Date 2004/5/21
Paper # LQE2004-7
Volume (vol) vol.104
Number (no) 98
Page pp.pp.-
#Pages 4
Date of Issue