Presentation 2004/5/21
Diode-pumped passively Q-switched high-brightness microchip lasers
Hiroshi SAKAI, Akihiro SONE, Hirohumi KAN, Takunori TAIRA,
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Abstract(in English) We are developing diode end-pumped high-brightness Cr^<4+>:YAG passively Q-switched Nd3+:YAG microchip lasers. In order to improve the peak power of the laser, we have measured the dependence of the initial transmission of saturable absorber and the cavity length. The mechanism of the passively Q-switching in the Nd^<3+>:YAG laser with Cr^<4+>:YAG crystals as a saturable absorber has been analyzed. A rate equation model that accounts for the final transmission of the saturable absorber was developed, and good agreement between the modeling and experiments was observed.As a result, its maximum output pulse energy 0.58mJ with the pulse width of 870ps and the peak power was 670kW with 1 OOHz repetition frequency and a beam quality of M^2 = 1.11.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Diode-pumped solid state laser / Passively Q-switch / Nd:YAG / Cr:YAG
Paper # LQE2004-6
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Committee LQE
Conference Date 2004/5/21(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Diode-pumped passively Q-switched high-brightness microchip lasers
Sub Title (in English)
Keyword(1) Diode-pumped solid state laser
Keyword(2) Passively Q-switch
Keyword(3) Nd:YAG
Keyword(4) Cr:YAG
1st Author's Name Hiroshi SAKAI
1st Author's Affiliation Central Research Laboratory, Hamamatsu Photonics K.K.()
2nd Author's Name Akihiro SONE
2nd Author's Affiliation Central Research Laboratory, Hamamatsu Photonics K.K.
3rd Author's Name Hirohumi KAN
3rd Author's Affiliation Central Research Laboratory, Hamamatsu Photonics K.K.
4th Author's Name Takunori TAIRA
4th Author's Affiliation Institute for Molecular Science
Date 2004/5/21
Paper # LQE2004-6
Volume (vol) vol.104
Number (no) 98
Page pp.pp.-
#Pages 5
Date of Issue